Hangzhou Silan Microelectronics SVF10N65CF N channel MOSFET for DC DC Converters and PWM Motor Control
Key Attributes
Model Number:
SVF10N65CF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
800mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
-
Output Capacitance(Coss):
130pF
Input Capacitance(Ciss):
1.1nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
29nC@10V
Mfr. Part #:
SVF10N65CF
Package:
TO-220F-3
Product Description
Product Overview
The SVF10N65CF/K/FJH is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology ensures minimal on-state resistance, superior switching performance, and robust high-energy pulse handling in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Certifications: Halogen free, Pb free
Technical Specifications
| Part Number | Package | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID) @ TC=25C | Drain Current (ID) @ TC=100C | Drain Current Pulsed (IDM) | Power Dissipation (PD) @ TC=25C | RDS(on)(typ.) @ VGS=10V, ID=5.0A | BVDSS @ VGS=0V, ID=250A | TJ Range | Tstg Range | RJC | RJA |
| SVF10N65CF/FJH | TO-220F-3L / TO-220FJH-3L | 650 V | 30 V | 10 A | 6.3 A | 40 A | 50 W | 0.80 | 650 V | -55+150 C | -55+150 C | 2.5 C/W | 62.5 C/W |
| SVF10N65CK | TO-262-3L | 650 V | 30 V | 10 A | 6.3 A | 40 A | 150 W | 0.80 | 650 V | -55+150 C | -55+150 C | 0.83 C/W | 62.5 C/W |
2501091111_Hangzhou-Silan-Microelectronics-SVF10N65CF_C467742.pdf
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