220 3L package Hangzhou Silan Microelectronics SVD640T N channel MOSFET for power supply applications
Key Attributes
Model Number:
SVD640T
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-65℃~+150℃
RDS(on):
150mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
34pF
Number:
1 N-channel
Output Capacitance(Coss):
160pF
Input Capacitance(Ciss):
1.108nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
41nC@10V
Mfr. Part #:
SVD640T
Package:
TO-220
Product Description
Product Overview
The SVD640T/D/S is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary S-RinTM structure VDMOS technology. This advanced technology offers minimized on-state resistance, superior switching performance, and enhanced robustness against high energy pulses in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: China
- Hazardous Substance Control: Pb free, Halogen free
Technical Specifications
| Part Number | Package | Drain-Source Voltage (V) | Gate-Source Voltage (V) | Drain Current (A) @ Tc=25C | RDS(on) () @ VGS=10V, ID=9A (Typ.) | Power Dissipation (W) @ Tc=25C | Package Type | Marking | Hazardous Substance Control | Packing Type |
| SVD640T | TO-220-3L | 200 | 20 | 18 | 0.12 | 150 | TO-220-3L | SVD640T | Pb free | Tube |
| SVD640D | TO-252-2L | 200 | 20 | 18 | 0.12 | 110 | TO-252-2L | SVD640D | Halogen free | Tube |
| SVD640DTR | TO-252-2L | 200 | 20 | 18 | 0.12 | 110 | TO-252-2L | SVD640D | Halogen free | Tape&Reel |
| SVD640S | TO-263-2L | 200 | 20 | 18 | 0.12 | 150 | TO-263-2L | SVD640S | Halogen free | Tube |
| SVD640STR | TO-263-2L | 200 | 20 | 18 | 0.12 | 150 | TO-263-2L | SVD640S | Halogen free | Tape&Reel |
2501091111_Hangzhou-Silan-Microelectronics-SVD640T_C393726.pdf
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