Load switch MOSFET series HUASHUO HSSX2901 featuring high cell density and low gate charge for switching
Key Attributes
Model Number:
HSSX2901
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
800mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
500mΩ@4.5V,0.65A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
17pF@6V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
3.7nC@4.5V
Mfr. Part #:
HSSX2901
Package:
SOT-563
Product Description
Product Overview
The HSSX2901 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density for excellent RDSON and gate charge. Designed for small power switching and load switch applications, these MOSFETs offer interfacing switching, load/power switching, logic level shift, and ESD-protected gate functionalities. The HSSX2901 meets RoHS and Green Product requirements with full function reliability approval.
Product Attributes
- Brand: HSSX
- Certifications: RoHS, Green Product
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSSX2901 (N-Channel) | Drain-Source Voltage (VDS) | 20 | V | |||
| Gate-Source Voltage (VGS) | 8 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ -4.5V | 0.8 | A | |||
| Pulsed Drain Current (IDM) | 3.1 | A | ||||
| Total Power Dissipation (PD@TA=25) | 0.3 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 20 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=0.65A | 300 | 500 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=2.5V , ID=0.45A | 600 | 800 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.5 | 0.7 | 1.0 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=16V , VGS=0V , TJ=25 | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=16V , VGS=0V , TJ=55 | 5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=8V , VDS=0V | 10 | uA | |||
| Total Gate Charge (Qg) | VDS=6V , VGS=4.5V , ID=0.3A | 3.7 | nC | |||
| Input Capacitance (Ciss) | VDS=6V , VGS=0V , f=1MHz | 41 | pF | |||
| HSSX2901 (P-Channel) | Drain-Source Voltage (VDS) | -20 | V | |||
| Gate-Source Voltage (VGS) | 8 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ -4.5V | -0.8 | A | |||
| Pulsed Drain Current (IDM) | -3.1 | A | ||||
| Total Power Dissipation (PD@TA=25) | 0.3 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -20 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-700mA | 600 | 800 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-2.5V , ID=-300mA | 800 | 1000 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -0.5 | -0.7 | -1.0 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=-16V , VGS=0V , TJ=55 | -5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=8V , VDS=0V | 10 | uA | |||
| Total Gate Charge (Qg) | VDS=-6V , VGS=-4.5V , ID=-0.3A | 19 | nC | |||
| Input Capacitance (Ciss) | VDS=-6V , VGS=0V , f=1MHz | 57 | pF |
2409272301_HUASHUO-HSSX2901_C7543683.pdf
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