86--136 6733 2386
quality P channel MOSFET HUASHUO HSS3401A fast switching 30V device with trench technology and low gate charge factory
quality P channel MOSFET HUASHUO HSS3401A fast switching 30V device with trench technology and low gate charge factory

P channel MOSFET HUASHUO HSS3401A fast switching 30V device with trench technology and low gate charge

Key Attributes
Model Number: HSS3401A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
53mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
71pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
920pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
11.9nC@4.5V
Mfr. Part #:
HSS3401A
Package:
SOT-23
Product Description

Product Overview

The HSS3401A is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. It is available as a Green Device and features super low gate charge and excellent Cdv/dt effect decline.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Channel MOSFET
  • Voltage Rating: 30V
  • Switching Speed: Fast Switching
  • Technology: Trench
  • Certifications: RoHS, Green Product
  • Availability: Green Device Available
  • Package: SOT-23

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage 12 12 V
ID@TA=25 Continuous Drain Current -4.3 A
ID@TA=70 Continuous Drain Current -3.6 A
IDM Pulsed Drain Current -20 A
PD@TA=25 Total Power Dissipation 1.0 W
PD@TA=70 Total Power Dissipation 0.9 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient (Note 1) --- 125 /W
RJA Thermal Resistance Junction-Ambient (t 10s) --- 85 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=-1mA -0.014 --- V/
RDS(ON),max Static Drain-Source On-Resistance (Note 2) VGS=-10V , ID=-3A --- 53 m
VGS=-4.5V , ID=-3A --- 60 m
VGS=-2.5V , ID=-2A --- 80 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.5 1.0 -1.2 V
VGS(th) VGS(th) Temperature Coefficient 2.6 --- mV/
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25 --- -1 uA
VDS=-24V , VGS=0V , TJ=55 --- -5 uA
IGSS Gate-Source Leakage Current VGS=12V , VDS=0V --- 100 nA
gfs Forward Transconductance VDS=-5V , ID=-3A 5.6 --- S
Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-3A 11.9 --- nC
Qgs Gate-Source Charge 1.8 --- nC
Qgd Gate-Drain Charge 3 --- nC
Td(on) Turn-On Delay Time VDD=-15V , VGS=-4.5V , RG=3.3, ID=-3A 6.6 --- ns
Tr Rise Time 27.8 --- ns
Td(off) Turn-Off Delay Time 46.2 --- ns
Tf Fall Time 20.6 --- ns
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz 920 --- pF
Coss Output Capacitance 73 --- pF
Crss Reverse Transfer Capacitance 71 --- pF
Diode Characteristics
IS Continuous Source Current (Note 1, 4) VG=VD=0V , Force Current --- -4.3 A
VSD Diode Forward Voltage (Note 2) VGS=0V , IS=-1A , TJ=25 --- -1.2 V

Notes:

  • 1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
  • 2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
  • 3. The power dissipation is limited by 150 junction temperature.
  • 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

Ordering Information:

Part Number Package Code Packaging
HSS3401A SOT-23 3000/Tape&Reel

2410121655_HUASHUO-HSS3401A_C518781.pdf
Related Products
quality NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component factory
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems factory
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.