P Channel MOSFET HUAYI HYG110P04LQ2D Featuring Low RDS ON and High Drain Current for DC DC Converters
Key Attributes
Model Number:
HYG110P04LQ2D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
1 P-Channel
Output Capacitance(Coss):
253pF
Input Capacitance(Ciss):
4.468nF
Pd - Power Dissipation:
57.7W
Gate Charge(Qg):
76nC@10V
Mfr. Part #:
HYG110P04LQ2D
Package:
TO-252-2L
Product Description
Product Overview
The HYG110P04LQ2 is a P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers reliable and rugged performance with a -40V drain-source voltage and -50A continuous drain current. Key advantages include low on-state resistance (RDS(ON)) at various gate-source voltages and 100% avalanche testing. This device is available in Halogen Free and Green configurations, compliant with RoHS standards.
Product Attributes
- Brand: HYM (implied by www.hymexa.com)
- Material: Halogen Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C | -40 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Junction Temperature Range | TJ | -55 | 175 | C | ||
| Storage Temperature Range | TSTG | -55 | 175 | C | ||
| Drain Current-Continuous | ID | Tc=25C | -50 | A | ||
| Drain Current-Continuous | ID | Tc=100C | -35.5 | A | ||
| Pulsed Drain Current | IDM | Tc=25C* | -180 | A | ||
| Maximum Power Dissipation | PD | Tc=25C | 57.7 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 28.8 | W | ||
| Thermal Resistance, Junction-to-Case | RTJC | 2.6 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RTJA | ** | 110 | C/W | ||
| Single Pulsed Avalanche Energy | EAS | L=0.3mH*** | 170 | mJ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=-250uA | -40 | V | ||
| Drain-to-Source Leakage Current | IDSS | VDS=-40V, VGS=0V | -1 | uA | ||
| Drain-to-Source Leakage Current | IDSS | TJ=125C | -50 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=-250uA | -1.0 | -1.6 | -3.0 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Drain-Source On-state Resistance | RDS(ON) | VGS=-10V,ID=-20A* | 9.4 | 12 | m | |
| Drain-Source On-state Resistance | RDS(ON) | VGS=-4.5V,ID=-20A* | 13 | 18 | m | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=-10A,VGS=0V* | -0.82 | -1.3 | V | |
| Reverse Recovery Time | trr | ISD=-10A,dI/dt=100A/us* | 18.4 | ns | ||
| Reverse Recovery Charge | Qrr | ISD=-10A,dI/dt=100A/us* | 13.5 | nC | ||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V, F=1MHz | 4.5 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 4468 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 253 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-25V, Frequency=1.0MHz | 140 | pF | ||
| Turn-on Delay Time | td(ON) | VDD=-20V,RG=2.5, IDS=-20A,VGS=-10V* | 10.5 | ns | ||
| Turn-on Rise Time | Tr | VDD=-20V,RG=2.5, IDS=-20A,VGS=-10V* | 48 | ns | ||
| Turn-off Delay Time | td(OFF) | VDD=-20V,RG=2.5, IDS=-20A,VGS=-10V* | 83 | ns | ||
| Turn-off Fall Time | Tf | VDD=-20V,RG=2.5, IDS=-20A,VGS=-10V* | 72 | ns | ||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS=-32V, VGS=-10V, ID=-20A* | 76 | nC | ||
| Gate-Source Charge | Qgs | VDS=-32V, VGS=-10V, ID=-20A* | 15.9 | nC | ||
| Gate-Drain Charge | Qgd | VDS=-32V, VGS=-10V, ID=-20A* | 14.2 | nC | ||
2410121257_HUAYI-HYG110P04LQ2D_C2830428.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
