86--136 6733 2386
quality 100V N Channel MOSFET HUASHUO HSH0076A Featuring Low On Resistance and Suitable for Motor Driver Circuits factory
quality 100V N Channel MOSFET HUASHUO HSH0076A Featuring Low On Resistance and Suitable for Motor Driver Circuits factory

100V N Channel MOSFET HUASHUO HSH0076A Featuring Low On Resistance and Suitable for Motor Driver Circuits

Key Attributes
Model Number: HSH0076A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
308A
RDS(on):
1.8mΩ@10V,30A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
388pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
13.37nF@50V
Pd - Power Dissipation:
430W
Gate Charge(Qg):
200nC@10V
Mfr. Part #:
HSH0076A
Package:
TO-263
Product Description

Product Overview

The HSH0076A is a N-Channel 100V Fast Switching MOSFET designed for high-frequency applications. It features advanced high cell density Trench technology, offering super low RDS(ON) and 100% EAS guaranteed performance. This MOSFET is suitable for motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous rectification. A green device version is available.

Product Attributes

  • Brand: HS-Semi
  • Technology: Advanced high cell density Trench technology
  • Certifications: 100% EAS Guaranteed, Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1,6 308 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1,6 218 A
IDM Pulsed Drain Current2 550 A
EAS Single Pulse Avalanche Energy3 1013 mJ
IAS Avalanche Current 45 A
PD@TC=25 Total Power Dissipation4 430 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 60 /W
RJC Thermal Resistance Junction-Case1 --- 0.35 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
RDS(ON),typ Static Drain-Source On-Resistance2 VGS=10V , ID=30A --- 1.8 2.2 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.0 --- 4.0 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 --- --- 1 uA
VDS=80V , VGS=0V , TJ=125 --- --- 100 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=20A --- 75 --- S
Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=20A --- 200 --- nC
Qgs Gate-Source Charge --- 54 ---
Qgd Gate-Drain Charge --- 49 ---
Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.0, ID=20A --- 47 --- ns
Tr Rise Time --- 28 --- ns
Td(off) Turn-Off Delay Time --- 79 --- ns
Tf Fall Time --- 18 --- ns
Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz --- 13370 --- pF
Coss Output Capacitance --- 1920 --- pF
Crss Reverse Transfer Capacitance --- 388 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 80 A
VSD Diode Forward Voltage2 VGS=0V , IS=50A , TJ=25 --- --- 1.1 V
trr Reverse Recovery Time IF=20A , dI/dt=100A/s , TJ=25 --- 70 --- nS
Qrr Reverse Recovery Charge --- 580 --- nC

Applications:

  • MOTOR Driver
  • BMS (Battery Management System)
  • High frequency switching and synchronous rectification

Notes:

  1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
  2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
  3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=45A.
  4. The power dissipation is limited by 150 junction temperature.
  5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
  6. Package limitation current.

2410121642_HUASHUO-HSH0076A_C5341706.pdf

Related Products
quality DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability factory
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
quality Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating factory
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
quality N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities factory
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
quality Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability factory
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.