60V P channel MOSFET HUASHUO HSM6115 featuring fast switching and superior electrical characteristics
Key Attributes
Model Number:
HSM6115
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
11A
RDS(on):
25mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
141pF
Number:
1 P-Channel
Input Capacitance(Ciss):
3.635nF
Pd - Power Dissipation:
5.2W
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
HSM6115
Package:
SOP-8
Product Description
Product Overview
The HSM6115 is a P-channel, 60V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key benefits include super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFET
- Voltage Rating: 60V
- Switching Speed: Fast Switching
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS | Drain-Source Voltage | -60 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| ID@TC=25 | Continuous Drain Current, -VGS @ -10V1 | -11 | A | ||
| ID@TC=100 | Continuous Drain Current, -VGS @ -10V1 | -8.5 | A | ||
| IDM | Pulsed Drain Current2 | -22 | A | ||
| EAS | Single Pulse Avalanche Energy3 | 113 | mJ | ||
| IAS | Avalanche Current | 47.6 | A | ||
| PD@TC=25 | Total Power Dissipation4 | 5.2 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| Thermal Data | |||||
| RJA | Thermal Resistance Junction-Ambient1 | 85 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | 24 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| BVDSS | Drain-Source Breakdown Voltage, VGS=0V , ID=-250uA | -60 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient, Reference to 25 , ID=-1mA | -0.035 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2, VGS=-10V , ID=-10A | 25 | m | ||
| RDS(ON) | Static Drain-Source On-Resistance2, VGS=-4.5V , ID=-8A | 33 | m | ||
| VGS(th) | Gate Threshold Voltage, VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | 4.28 | mV/ | ||
| IDSS | Drain-Source Leakage Current, VDS=-48V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current, VDS=-48V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS | Gate-Source Leakage Current, VGS=±20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance, VDS=-10V , ID=-18A | 23 | S | ||
| Rg | Gate Resistance, VDS=0V , VGS=0V , f=1MHz | 7 | |||
| Qg | Total Gate Charge (-4.5V), VDS=-20V , VGS=-4.5V , ID=-10A | 25 | nC | ||
| Qgs | Gate-Source Charge | 6.7 | |||
| Qgd | Gate-Drain Charge | 5.5 | |||
| td(on) | Turn-On Delay Time, VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | 38 | ns | ||
| tr | Rise Time | 23.6 | |||
| td(off) | Turn-Off Delay Time | 100 | |||
| tf | Fall Time | 6.8 | |||
| Ciss | Input Capacitance, VDS=-15V , VGS=0V , f=1MHz | 3635 | pF | ||
| Coss | Output Capacitance | 224 | |||
| Crss | Reverse Transfer Capacitance | 141 | |||
| Diode Characteristics | |||||
| IS | Continuous Source Current1,5, VG=VD=0V , Force Current | -11 | A | ||
| ISM | Pulsed Source Current2,5 | -22 | A | ||
| VSD | Diode Forward Voltage2, VGS=0V , IS=-1A , TJ=25 | -1 | V | ||
| Ordering Information | |||||
| Part Number | Package Code | Packaging | |||
| HSM6115 | SOP-8 | 2500/Tape&Reel | |||
Note: 1Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2Tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 3EAS data shows Max. rating. Test condition: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-47.6A. 4Power dissipation is limited by 150 junction temperature. 5Data is theoretically the same as ID and IDM, but in real applications, should be limited by total power dissipation.
2410121456_HUASHUO-HSM6115_C700986.pdf
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