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quality Dual N-Channel MOSFET HSBB4252 Featuring Fast Switching and Low On Resistance for Power Applications factory
quality Dual N-Channel MOSFET HSBB4252 Featuring Fast Switching and Low On Resistance for Power Applications factory

Dual N-Channel MOSFET HSBB4252 Featuring Fast Switching and Low On Resistance for Power Applications

Key Attributes
Model Number: HSBB4252
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
38pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
690pF@15V
Pd - Power Dissipation:
21W
Gate Charge(Qg):
5.8nC@4.5V
Mfr. Part #:
HSBB4252
Package:
PRPAK3x3-8L
Product Description

Product Overview

The HSBB4252 is a Dual N-Channel Fast Switching MOSFET designed for power management applications. It features 40V drain-source voltage, low on-resistance, and super low gate charge. Key advantages include 100% EAS guaranteed, excellent CdV/dt effect decline, and advanced high cell density Trench technology. Ideal for power management in desktop computers, DC/DC converters, and isolated DC/DC converters in telecom and industrial sectors.

Product Attributes

  • Brand: HS-Semi
  • Device Type: Dual N-Channel MOSFET
  • Technology: Advanced high cell density Trench technology
  • Green Device: Available

Technical Specifications

HSBB4252 DUAL N-Ch 40V Fast Switching MOSFETs
Symbol Parameter Rating Units
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current 30 A
ID@TC=100 Continuous Drain Current 20 A
IDM Pulsed Drain Current 90 A
EAS Single Pulse Avalanche Energy 48 mJ
IAS Avalanche Current 31 A
PD@TC=25 Total Power Dissipation 21 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Symbol Parameter Typ. Max. Unit
RθJA Thermal Resistance Junction-ambient (Steady State) --- 62 /W
RθJC Thermal Resistance Junction-Case --- 6 /W
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 40 --- --- V
RDS(ON),max Static Drain-Source On-Resistance VGS=10V , ID=30A --- --- 10 mΩ
RDS(ON),max Static Drain-Source On-Resistance VGS=4.5V , ID=8A --- --- 18 mΩ
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 1.0 1.5 2.5 V
IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25 --- --- 1 µA
IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=55 --- --- 5 µA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 --- Ω
Qg Total Gate Charge VDS=20V , VGS=4.5V , ID=12A --- 5.8 --- nC
Qgs Gate-Source Charge --- 3 --- nC
Qgd Gate-Drain Charge --- 1.2 --- nC
Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3Ω, ID=1A --- 14.3 --- ns
Tr Rise Time --- 5.6 --- ns
Td(off) Turn-Off Delay Time --- 20 --- ns
Tf Fall Time --- 11 --- ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 690 --- pF
Coss Output Capacitance --- 193 --- pF
Crss Reverse Transfer Capacitance --- 38 --- pF
IS Continuous Source Current VG=VD=0V , Force Current --- --- 30 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 --- --- 1 V
PRPAK3X3 Package Outline Dimensions
[Dimensions not provided in source text]

2410122027_HUASHUO-HSBB4252_C28314518.pdf

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