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quality Dual N channel 100V fast switching MOSFET HUASHUO HSM0204 with low gate charge and trench technology factory
quality Dual N channel 100V fast switching MOSFET HUASHUO HSM0204 with low gate charge and trench technology factory

Dual N channel 100V fast switching MOSFET HUASHUO HSM0204 with low gate charge and trench technology

Key Attributes
Model Number: HSM0204
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
112mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
37.4pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.535nF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
19.5nC@10V
Mfr. Part #:
HSM0204
Package:
SOP-8
Product Description

Product Overview

The HSM0204 is a dual N-channel, 100V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and is available in a Green Device option. Key features include super low gate charge and excellent Cdv/dt effect decline.

Product Attributes

  • Brand: HS-Semi
  • Product Series: HSM0204
  • Technology: Trench MOSFET
  • Certifications: RoHS, Green Product

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Units
HSM0204 Drain-Source Breakdown Voltage (BVDSS) VGS=0V, ID=250uA 100 --- --- V
BVDSS Temperature Coefficient Reference to 25, ID=1mA --- 0.098 --- V/
Static Drain-Source On-Resistance (RDS(ON)) VGS=10V, ID=2A --- 90 112 m
Static Drain-Source On-Resistance (RDS(ON)) VGS=4.5V, ID=1A --- 95 120 m
Gate Threshold Voltage (VGS(th)) VGS=VDS, ID=250uA 1.0 1.5 2.5 V
VGS(th) Temperature Coefficient --- -4.57 --- mV/
Drain-Source Leakage Current (IDSS) VDS=80V, VGS=0V, TJ=25 --- --- 10 uA
Drain-Source Leakage Current (IDSS) VDS=80V, VGS=0V, TJ=55 --- --- 100 uA
Gate-Source Leakage Current (IGSS) VGS=20V, VDS=0V --- --- 100 nA
Forward Transconductance (gfs) VDS=5V, ID=2A --- 12 --- S
Total Gate Charge (Qg) VDS=60V, VGS=10V, ID=2A --- 19.5 --- nC
Input Capacitance (Ciss) VDS=15V, VGS=0V, f=1MHz --- 1535 --- pF
Output Capacitance (Coss) VDS=15V, VGS=0V, f=1MHz --- 60 --- pF
HSM0204 Continuous Drain Current (ID@TA=25) VGS @ 10V --- --- 2.5 A
Pulsed Drain Current (IDM) --- --- 10 A
HSM0204 Single Pulse Avalanche Energy (EAS) --- --- 6.1 mJ
HSM0204 Total Power Dissipation (PD@TA=25) --- --- 1.5 W
HSM0204 Storage Temperature Range (TSTG) -55 --- 150
HSM0204 Operating Junction Temperature Range (TJ) -55 --- 150
HSM0204 Thermal Resistance Junction-ambient (RJA) --- --- 85 /W
HSM0204 Thermal Resistance Junction-Case (RJC) --- --- 36 /W
HSM0204 Continuous Source Current (IS) VG=VD=0V, Force Current --- --- 4 A
HSM0204 Pulsed Source Current (ISM) --- --- 8 A
HSM0204 Diode Forward Voltage (VSD) VGS=0V, IS=1A, TJ=25 --- --- 1.2 V

Ordering Information

Part Number Package Code Packaging
HSM0204 SOP-8 2500/Tape&Reel

2410121447_HUASHUO-HSM0204_C2828491.pdf

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