High cell density complementary MOSFETs HUASHUO HSU3903 designed for power switching and reliability
Key Attributes
Model Number:
HSU3903
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A;24A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
65pF@20V;115pF@20V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
572pF@20V;930pF@20V
Pd - Power Dissipation:
25W
Gate Charge(Qg):
7.2nC@4.5V;9.8nC@4.5V
Mfr. Part #:
HSU3903
Package:
TO-252-4
Product Description
Product Overview
The HSU3903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density, offering excellent RDSON and gate charge characteristics. These MOSFETs are designed for synchronous buck converter applications and meet RoHS and Green Product requirements. They are 100% EAS guaranteed with full function reliability approval, providing advantages such as super low gate charge and excellent CdV/dt effect decline through advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
- Guarantees: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSU3903 (N-Ch) | VDS | Drain-Source Voltage | 30 | V | ||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 30 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 18 | A | |||
| IDM | Pulsed Drain Current | 60 | A | |||
| EAS | Single Pulse Avalanche Energy | 22 | mJ | |||
| IAS | Avalanche Current | 21 | A | |||
| PD@TC=25 | Total Power Dissipation | 25 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | |||
| RJC | Thermal Resistance Junction-Case | 5 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=10A | 18 | m | ||
| Qg | Total Gate Charge | VDS=20V , VGS=4.5V , ID=12A | 7.2 | nC | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 572 | pF | ||
| HSU3903 (P-Ch) | VDS | Drain-Source Voltage | -30 | V | ||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | -24 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | -19 | A | |||
| IDM | Pulsed Drain Current | -50 | A | |||
| EAS | Single Pulse Avalanche Energy | 45 | mJ | |||
| IAS | Avalanche Current | -30 | A | |||
| PD@TC=25 | Total Power Dissipation | 25 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | |||
| RJC | Thermal Resistance Junction-Case | 5 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-12A | 30 | m | ||
| Qg | Total Gate Charge | VDS=-20V , VGS=-4.5V , ID=-12A | 9.8 | nC | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 930 | pF |
2410121525_HUASHUO-HSU3903_C508800.pdf
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