P Channel Fast Switching MOSFET HUASHUO HSS2P15 for 150V Applications Load Switching Power Management
Key Attributes
Model Number:
HSS2P15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
2A
RDS(on):
780mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF@75V
Number:
1 P-Channel
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
715pF@75V
Gate Charge(Qg):
10.5nC@10V
Mfr. Part #:
HSS2P15
Package:
SOT-23L
Product Description
Product Overview
The HSS2P15 is a P-Channel Fast Switching MOSFET designed for 150V applications. It features a fast switching capability, super low gate charge, and excellent CdV/dt effect decline, making it suitable for load switching, power management, LED backlighting, and networking applications. The device utilizes advanced high cell density Trench technology and is 100% EAS Guaranteed. A green device option is available.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench technology
- Certification: Green Device Available
- EAS Guaranteed: 100%
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -150 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | -2 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | -1.3 | A | |||
| IDM | Pulsed Drain Current2 | -7.5 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 12.5 | mJ | |||
| IAS | Avalanche Current | -5 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 125 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 40 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -150 | --- | --- | V |
| RDS(ON),max | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-1A | 650 | 780 | m | |
| VGS=-6V , ID=-0.5A | 700 | 980 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -2.0 | -3.0 | -4.0 | V |
| VGS(th) | VGS(th) Temperature Coefficient | 5.42 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=-120V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=-120V , VGS=0V , TJ=150 | --- | 30 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 12 | --- | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-75V , VGS=-10V , ID=-1A | 10.5 | --- | nC | |
| Qgs | Gate-Source Charge | 3.2 | --- | nC | ||
| Qgd | Gate-Drain Charge | 2.3 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=-30V , VGS=-10V , RG=6, ID=-1A | 21 | --- | ns | |
| Tr | Rise Time | 17 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 40 | --- | ns | ||
| Tf | Fall Time | 18 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-75V , VGS=0V , F=1MHz | 715 | --- | pF | |
| Coss | Output Capacitance | 21 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 14 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,6 | VG=VD=0V , Force Current | --- | -1 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSS2P15 | SOT-23L | 3000/Tape&Reel |
Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width 300us, duty cycle 2%.
3 The power dissipation is limited by 150 junction temperature.
4 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121637_HUASHUO-HSS2P15_C2987710.pdf
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