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quality P Channel 100V MOSFET HUASHUO HSU12P10 with Fast Switching Low Gate Charge and Superior Cdvdt Effect factory
quality P Channel 100V MOSFET HUASHUO HSU12P10 with Fast Switching Low Gate Charge and Superior Cdvdt Effect factory

P Channel 100V MOSFET HUASHUO HSU12P10 with Fast Switching Low Gate Charge and Superior Cdvdt Effect

Key Attributes
Model Number: HSU12P10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
270mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
26pF@30V
Number:
1 P-Channel
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
-
Mfr. Part #:
HSU12P10
Package:
TO-252-2
Product Description

Product Overview

The HSU12P10 is a P-Channel, 100V Fast Switching MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline.

Product Attributes

  • Brand: HS-Semi
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed, Full Function Reliability Approved

Technical Specifications

Parameter Rating/Conditions Unit Typical Max.
Absolute Maximum Ratings
VDS Drain-Source Voltage V -100
VGS Gate-Source Voltage V ±20
ID@TC=25 Continuous Drain Current, VGS @ -10V A -12
ID@TC=100 Continuous Drain Current, VGS @ -10V A -6.8
IDM Pulsed Drain Current A -25
EAS Single Pulse Avalanche Energy mJ 49
PD@TC=25 Total Power Dissipation W 35
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient /W --- 62
RJC Thermal Resistance Junction-Case /W --- 3.8
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage (VGS=0V , ID=-250uA) V -100 ---
RDS(ON) Static Drain-Source On-Resistance (VGS=-10V , ID=-5A) m 240 270
RDS(ON) Static Drain-Source On-Resistance (VGS=-4.5V , ID=-5A) m 260 340
VGS(th) Gate Threshold Voltage (VGS=VDS , ID =-250uA) V -1.2 -3.0
IDSS Drain-Source Leakage Current (VDS=-100V , VGS=0V , TJ=25) uA --- -50
IGSS Gate-Source Leakage Current (VGS=±20V , VDS=0V) nA --- ±100
Qg Total Gate Charge (VDS=-50V , VGS=-10V , ID=-5A) nC 17 ---
Qgs Gate-Source Charge nC 3.13 ---
Qgd Gate-Drain Charge nC 2.7 ---
Td(on) Turn-On Delay Time (VDD=-30V , VGS=-10V , RG=3.3, ID=-1A) ns 11 ---
Tr Rise Time ns 7.4 ---
Td(off) Turn-Off Delay Time ns 39 ---
Tf Fall Time ns 28 ---
Ciss Input Capacitance (VDS=-30V , VGS=0V , f=1MHz) pF 900 ---
Coss Output Capacitance pF 40 ---
Crss Reverse Transfer Capacitance pF 26 ---
Diode Characteristics
VSD Diode Forward Voltage (VGS=0V , IS=-1A , TJ=25) V --- -1.2
Part Number Package Code Packaging
HSU12P10 TO252-2 2500/Tape&Reel

2410121630_HUASHUO-HSU12P10_C5341701.pdf
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