Trenched N channel MOSFET HUASHUO HSU1241 optimized for fast switching and performance in converters
Key Attributes
Model Number:
HSU1241
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16.5mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
76pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.013nF@15V
Pd - Power Dissipation:
31.3W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
HSU1241
Package:
TO-252-2
Product Description
Product Overview
The HSU1241 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter systems. It offers excellent RDS(ON) and gate charge characteristics. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline, enabled by advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Reliability: 100% EAS guaranteed, Full function reliability approved
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 40 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | |||
| Continuous Drain Current, VGS @ 10V (ID@TC=25)1 | 40 | A | |||
| Continuous Drain Current, VGS @ 10V (ID@TC=100)1 | 23 | A | |||
| Pulsed Drain Current (IDM)2 | 85 | A | |||
| Single Pulse Avalanche Energy (EAS)3 | 31.3 | mJ | |||
| Avalanche Current (IAS) | 25 | A | |||
| Total Power Dissipation (PD@TC=25)4 | 31.3 | W | |||
| Total Power Dissipation (PD@TA=25)4 | 2 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | |||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||
| Thermal Data | |||||
| Thermal Resistance Junction-ambient (RJA)1 | (Steady State) | --- | 65 | /W | |
| Thermal Resistance Junction-Case (RJC)1 | --- | 3 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 40 | --- | --- | V |
| BVDSS Temperature Coefficient (BVDSS/TJ) | Reference to 25 , ID=1mA | 0.032 | --- | V/ | |
| Static Drain-Source On-Resistance (RDS(ON),max)2 | VGS=10V , ID=40A | 13.5 | 16.5 | m | |
| Static Drain-Source On-Resistance (RDS(ON),max)2 | VGS=4.5V , ID=10A | 18.4 | 24 | V | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.6 | 2.5 | V |
| VGS(th) Temperature Coefficient (VGS(th)) | -4.8 | --- | mV/ | ||
| Drain-Source Leakage Current (IDSS) | VDS=32V , VGS=0V , TJ=25 | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=32V , VGS=0V , TJ=55 | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| Forward Transconductance (gfs) | VDS=5V , ID=15A | 34 | --- | S | |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | 2.1 | --- | ||
| Total Gate Charge (Qg) (4.5V) | VDS=32V , VGS=4.5V , ID=15A | 10 | --- | nC | |
| Gate-Source Charge (Qgs) | 2.55 | --- | |||
| Gate-Drain Charge (Qgd) | 4.8 | --- | |||
| Turn-On Delay Time (Td(on)) | VDD=20V , VGS=10V , RG=3.3, ID=15A | 2.8 | --- | ns | |
| Rise Time (Tr) | 12.8 | --- | |||
| Turn-Off Delay Time (Td(off)) | 21.2 | --- | |||
| Fall Time (Tf) | 6.4 | --- | |||
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | 1013 | --- | pF | |
| Output Capacitance (Coss) | 107 | --- | |||
| Reverse Transfer Capacitance (Crss) | 76 | --- | |||
| Diode Characteristics | |||||
| Continuous Source Current (IS)1,5 | VG=VD=0V , Force Current | --- | 40 | A | |
| Pulsed Source Current (ISM)2,5 | --- | 85 | A | ||
| Diode Forward Voltage (VSD)2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| Reverse Recovery Time (trr) | IF=15A , dI/dt=100A/s , TJ=25 | 10 | --- | nS | |
| Reverse Recovery Charge (Qrr) | 3.1 | --- | nC | ||
| Ordering Information | |||||
| Part Number | Package Code | Packaging | |||
| HSU1241 | TO252-2 | 2500/Tape&Reel | |||
Notes:
1 Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 Tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3 EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=25A.
4 Power dissipation is limited by 150 junction temperature.
5 Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121517_HUASHUO-HSU1241_C700996.pdf
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