DUAL N-Channel Fast Switching MOSFET HUASHUO HSSK2N7002 with Halogen Free Material and ESD Protection
Key Attributes
Model Number:
HSSK2N7002
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
2.3Ω@10V,0.3A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
4.2pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
18.5pF@30V
Gate Charge(Qg):
500pC@10V
Mfr. Part #:
HSSK2N7002
Package:
SOT-363
Product Description
Product Overview
The HSSK2N7002 is a DUAL N-Channel Fast Switching MOSFET designed for a variety of applications including low-side load switching, level shift circuits, DC-DC converters, and portable devices such as DSCs, PDAs, and cell phones. These MOSFETs offer ESD protection and low RDS(on) characteristics, ensuring efficient and reliable performance. The material complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: HS-Semi
- Product Type: DUAL N-Channel Fast Switching MOSFETs
- Compliance: RoHS requirements, Halogen Free
- Features: ESD protected, Low RDS(on)
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 300 | mA | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 190 | mA | |||
| IDM | Pulsed Drain Current2 | 0.65 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 0.35 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 300 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.054 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=200mA | 1.8 | 2.3 | ||
| VGS=4.5V , ID=100mA | 2.3 | 3.0 | V | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.4 | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | -4.96 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=48V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 10 | uA | ||
| gfs | Forward Transconductance | VDS=50V , ID=200mA | 0.16 | S | ||
| Qg | Total Gate Charge (4.5V) | VDS=0.5V , VGS=10V , ID=200mA | 0.5 | nC | ||
| Qgs | Gate-Source Charge | 0.2 | ||||
| Qgd | Gate-Drain Charge | 0.15 | ||||
| Td(on) | Turn-On Delay Time | VDD=30V , VGEN=10V , RG=25, ID=500mA, RL=60 | 6.7 | ns | ||
| Tr | Rise Time | 12 | ns | |||
| Td(off) | Turn-Off Delay Time | 13 | ns | |||
| Tf | Fall Time | 15 | ns | |||
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | 18.5 | pF | ||
| Coss | Output Capacitance | 7.5 | pF | |||
| Crss | Reverse Transfer Capacitance | 4.2 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | 300 | mA | ||
| ISM | Pulsed Source Current2,4 | 0.65 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=0.5A , TJ=25 | 1.2 | V | ||
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSSK2N7002 | SOT-363 | Tape&Reel | 3000 |
Notes:
1 Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 Tested by pulsed, pulse width 300s, duty cycle 2%.
3 Power dissipation is limited by 150 junction temperature.
4 Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121532_HUASHUO-HSSK2N7002_C7543684.pdf
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