Power management N Channel MOSFET HUASHUO HSBA90N02 featuring super low gate charge and performance
Key Attributes
Model Number:
HSBA90N02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
90A
RDS(on):
4.5mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Output Capacitance(Coss):
360pF
Input Capacitance(Ciss):
3.05nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
HSBA90N02
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA90N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key benefits include super low gate charge and suitability for battery protection and power management systems.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 90 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 63 | A | |||
| IDM | Pulsed Drain Current2 | 350 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 195 | mJ | |||
| PD@TC=25 | Total Power Dissipation4 | 60 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient (Steady State)1 | --- | --- | 62 | /W | |
| RJC | Thermal Resistance Junction-Case1 | --- | --- | 2.1 | /W | |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25, ID=1mA | --- | 0.028 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A | --- | 2.9 | 3.8 | mΩ |
| VGS=2.5V , ID=15A | --- | 3.4 | 4.5 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | --- | 1.0 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | --- | -6.16 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=20V , VGS=0V , TJ=25 | --- | --- | 1 | µA |
| VDS=20V , VGS=0V , TJ=55 | --- | --- | 5 | µA | ||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=10V , ID=20A | --- | 99 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | --- | Ω |
| Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=10V , ID=20A | --- | 37 | --- | nC |
| Qgs | Gate-Source Charge | --- | 5.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 8.2 | --- | ||
| td(on) | Turn-On Delay Time | VDD=10V , VGS=4.5V , RG=3.3Ω ID=20A | --- | 10 | --- | ns |
| tr | Rise Time | --- | 5.5 | --- | ||
| td(off) | Turn-Off Delay Time | --- | 49 | --- | ||
| tf | Fall Time | --- | 5.3 | --- | ||
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | --- | 3050 | --- | pF |
| Coss | Output Capacitance | --- | 360 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 40 | --- | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 90 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | 350 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=20A , TJ=25 | --- | --- | 1.0 | V |
| trr | Reverse Recovery Time | IF=20A , dI/dt=100A/µs , TJ=25 | --- | 16 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 6.6 | --- | nC | |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBA90N02 | PRPAK5*6 | 3000/Tape&Reel |
2410122016_HUASHUO-HSBA90N02_C22359238.pdf
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