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quality 30V P channel MOSFET HUASHUO HSS06P03 fast switching device with low gate charge and RoHS compliance factory
quality 30V P channel MOSFET HUASHUO HSS06P03 fast switching device with low gate charge and RoHS compliance factory

30V P channel MOSFET HUASHUO HSS06P03 fast switching device with low gate charge and RoHS compliance

Key Attributes
Model Number: HSS06P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A
RDS(on):
36mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
102pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
1.181nF@15V
Gate Charge(Qg):
24.1nC@10V
Mfr. Part #:
HSS06P03
Package:
SOT-23
Product Description

Product Overview

The HSS06P03 is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. It is available as a Green Device and features super low gate charge and excellent Cdv/dt effect decline.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Ch MOSFET
  • Voltage Rating: 30V
  • Switching Speed: Fast Switching
  • Technology: Trench
  • Certifications: RoHS, Green Product

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±20 V
ID@TA=25 Continuous Drain Current, VGS @ -10V1 -6 A
IDM Pulsed Drain Current2 -24 A
PD@TA=25 Total Power Dissipation3 1.25 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient1 --- 100 /W
RJC Thermal Resistance Junction-Case1 --- 80 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-4.2A 23 28 m
VGS=-4.5V , ID=-4A 30 36 m
VGS=-2.5V , ID=-1A 38 48 m
VDS = -30 V, ID = -6 A --- 28 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1 -1.5 -2 V
ΔVGS(th) VGS(th) Temperature Coefficient --- 4 --- mV/
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25 --- --- -1 uA
VDS=-24V , VGS=0V , TJ=55 --- --- -5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
Qg Total Gate Charge VDS=-15V , VGS=-10V , ID=-1A --- 24.1 --- nC
Qgs Gate-Source Charge --- 3.8 --- nC
Qgd Gate-Drain Charge --- 4.2 --- nC
Td(on) Turn-On Delay Time VDD=-15V , VGS=-4.5V , RG=10, RL=15, ID=-1A --- 48 --- ns
Tr Rise Time --- 3.2 --- ns
Td(off) Turn-Off Delay Time --- 18 --- ns
Tf Fall Time --- 9 --- ns
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 1181 --- pF
Coss Output Capacitance --- 143 --- pF
Crss Reverse Transfer Capacitance --- 102 --- pF
Diode Characteristics
IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- -6 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 --- --- -1 V

Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

Part Number Package Code Packaging Quantity
HSS06P03 SOT-23L Tape&Reel 3000

2410121629_HUASHUO-HSS06P03_C2987708.pdf
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