High cell density trench P channel MOSFET HUASHUO SI2301 with switching and green product compliance
Key Attributes
Model Number:
SI2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF@10V
Number:
1 P-Channel
Output Capacitance(Coss):
54pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
270pF
Gate Charge(Qg):
4.3nC@4.5V
Mfr. Part #:
SI2301
Package:
SOT-23
Product Description
Product Overview
The SI2301 is a P-channel, 20V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and is approved for full function reliability. Key features include Green Device availability, super low gate charge, and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Technology: Trench P-channel MOSFET
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V1 | -2 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V1 | -1.4 | A | |||
| IDM | Pulsed Drain Current2 | -8 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | 145 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 80 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-2A | 130 | 150 | m | |
| VGS=-2.5V , ID=-1A | 170 | 190 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.3 | -0.65 | -1.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | ||
| VDS=-16V , VGS=0V , TJ=55 | -5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-1A | 5 | S | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-10V , VGS=-4.5V , ID=-2A | 4.3 | nC | ||
| Qgs | Gate-Source Charge | 0.7 | ||||
| Qgd | Gate-Drain Charge | 1 | ||||
| Td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3 , ID=-2A | 12 | ns | ||
| Tr | Rise Time | 20 | ns | |||
| Td(off) | Turn-Off Delay Time | 23 | ns | |||
| Tf | Fall Time | 9 | ns | |||
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , f=1MHz | 270 | pF | ||
| Coss | Output Capacitance | 54 | pF | |||
| Crss | Reverse Transfer Capacitance | 44 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -2 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
Notes:
- 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
- 3. The power dissipation is limited by 150 junction temperature.
- 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Ordering Information
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| SI2301 | SOT-23 | 3000/Tape&Reel | 3000 |
2410122016_HUASHUO-SI2301_C22359218.pdf
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