Power Distribution with HXY MOSFET AOTL66912 N SGT Enhancement Mode MOSFET Featuring Low Gate Charge
Key Attributes
Model Number:
AOTL66912
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
312A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 N-channel
Output Capacitance(Coss):
2.12nF
Input Capacitance(Ciss):
14.3nF
Pd - Power Dissipation:
390.6W
Gate Charge(Qg):
250nC@10V
Mfr. Part #:
AOTL66912
Package:
TOLL
Product Description
Product Overview
The AOTL66912 N-SGT Enhancement Mode MOSFET utilizes advanced SGT MOSFET technology to deliver low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. It is specifically designed for enhanced ruggedness, making it suitable for applications such as battery protection and power distribution.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Product ID: AOTL66912
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Technology: N-SGT Enhancement Mode MOSFET
- Package: TOLL
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | 350 | A | ||
| Continuous Drain Current | ID | TC=100C | 200 | A | ||
| Pulsed Drain Current | IDM | 1248 | A | |||
| Single Pulse Avalanche Energy | EAS | 1250 | mJ | |||
| Total Power Dissipation | PD | TC=25C | 390.6 | W | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | C | ||
| Thermal Resistance Junction-to-Ambient | RJA | 39 | C/W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.32 | C/W | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 100 | V | ||
| Gate-body Leakage current | lGSS | VDS = 0V, VGS = 20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V, TJ=25C | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V, TJ=100C | 100 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Drain-Source on-Resistance | RDS(on) | VGS = 10V, ID = 20A | 1.4 | 2.0 | m | |
| Forward Transconductance | gfs | VDS = 10V, ID =20A | 84 | S | ||
| Input Capacitance | Ciss | VDS = 50V, VGS =0V, f =1MHz | 14300 | pF | ||
| Output Capacitance | Coss | VDS = 50V, VGS =0V, f =1MHz | 2120 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 50V, VGS =0V, f =1MHz | 50 | pF | ||
| Gate Resistance | Rg | f=1MHz | 2.8 | |||
| Total Gate Charge | Qg | VGS = 10V, VDS = 50V, ID= 20A | 250 | nC | ||
| Gate-Source Charge | Qgs | VGS = 10V, VDS = 50V, ID= 20A | 53 | |||
| Gate-Drain Charge | Qg d | VGS = 10V, VDS = 50V, ID= 20A | 77 | |||
| Turn-on Delay Time | td(on) | VGS =10V, VDD = 50V, RG = 3, ID= 20A | 41 | ns | ||
| Rise Time | tr | VGS =10V, VDD = 50V, RG = 3, ID= 20A | 88 | ns | ||
| Turn-off Delay Time | td(off) | VGS =10V, VDD = 50V, RG = 3, ID= 20A | 163 | ns | ||
| Fall Time | tf | VGS =10V, VDD = 50V, RG = 3, ID= 20A | 98 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=20A, di/dt = 100A/s | 106 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=20A, di/dt = 100A/s | 245 | nC | ||
| Diode Forward Voltage | VSD | IS = 20A, VGS = 0V | 1.2 | V | ||
| Continuous Source Current | IS | TC=25C | 350 | A |
2511171529_HXY-MOSFET-AOTL66912_C48996529.pdf
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