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quality Robust MOSFET HUAYI HYG017N10NS1TA 100V 330A with Avalanche Tested Reliability and Low On Resistance factory
quality Robust MOSFET HUAYI HYG017N10NS1TA 100V 330A with Avalanche Tested Reliability and Low On Resistance factory

Robust MOSFET HUAYI HYG017N10NS1TA 100V 330A with Avalanche Tested Reliability and Low On Resistance

Key Attributes
Model Number: HYG017N10NS1TA
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
330A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.6mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
408pF
Number:
1 N-channel
Input Capacitance(Ciss):
13.88nF
Pd - Power Dissipation:
428.5W
Gate Charge(Qg):
217nC@10V
Mfr. Part #:
HYG017N10NS1TA
Package:
TOLL-8L
Product Description

Product Overview

The HYG017N10NS1TA is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with a 100V/330A rating, low on-state resistance (RDS(ON)=1.6m typ. @VGS = 10V), and is 100% avalanche tested for reliability and ruggedness. Halogen-free and RoHS compliant versions are available.

Product Attributes

  • Brand: HYG (Huayi Microelectronics)
  • Origin: China
  • Certifications: RoHS Compliant, Halogen-Free

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Common Ratings
Drain-Source VoltageVDSSTc=25C Unless Otherwise Noted--100V
Gate-Source VoltageVGSS--±20±20V
Junction Temperature RangeTJ--55-175°C
Storage Temperature RangeTSTG--55-175°C
Source Current-Continuous (Body Diode)ISTc=25C, Mounted on Large Heat Sink--330A
Pulsed Drain CurrentIDMTc=25C, Pulse width limited by max.junction temperature--1200A
Continuous Drain CurrentIDTc=25C--330A
Continuous Drain CurrentIDTc=100C--233A
Maximum Power DissipationPDTc=25C--428.5W
Maximum Power DissipationPDTc=100C--214.3W
Thermal Resistance, Junction-to-CaseRJC---0.35°C/W
Thermal Resistance, Junction-to-AmbientRJASurface mounted on 1in2 FR-4 board--45°C/W
Single Pulsed-Avalanche EnergyEASL=0.3mH, Limited by TJmax , starting TJ=25C, RG= 25, VGS =10V--1605mJ
Static Characteristics
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS= 250A100--V
Drain-to-Source Leakage CurrentIDSSVDS=100V,VGS=0V--1μA
Drain-to-Source Leakage CurrentIDSSTJ=125C, VDS=100V,VGS=0V--50μA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS= 250A234V
Gate-Source Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
Drain-Source On-State ResistanceRDS(ON)VGS= 10V,IDS=100A-1.61.95mΩ
Diode Characteristics
Diode Forward VoltageVSDISD=100A,VGS=0V-0.861.2V
Reverse Recovery TimetrrISD=100A,dISD/dt=100A/μs-154-ns
Reverse Recovery ChargeQrr--260-nC
Dynamic Characteristics
Gate ResistanceRGVGS=0V,VDS=0V,F=300KHz-1.3-Ω
Input CapacitanceCissVGS=0V, VDS= 25V, Frequency=300KHz-13880-pF
Output CapacitanceCossVGS=0V, VDS= 25V, Frequency=300KHz-5260-pF
Reverse Transfer CapacitanceCrssVGS=0V, VDS= 25V, Frequency=300KHz-408-pF
Turn-on Delay Timetd(ON)VDD= 50V,RG=4.0Ω, IDS= 100A,VGS= 10V-50-ns
Turn-on Rise TimeTrVDD= 50V,RG=4.0Ω, IDS= 100A,VGS= 10V-114-ns
Turn-off Delay Timetd(OFF)VDD= 50V,RG=4.0Ω, IDS= 100A,VGS= 10V-108-ns
Turn-off Fall TimeTfVDD= 50V,RG=4.0Ω, IDS= 100A,VGS= 10V-132-ns
Gate Charge Characteristics
Total Gate ChargeQgVDS =80V, VGS=10V,IDs=100A-217-nC
Gate-Source ChargeQgsVDS =80V, VGS=10V,IDs=100A-75-nC
Gate-Drain ChargeQgdVDS =80V, VGS=10V,IDs=100A-47-nC

2410121242_HUAYI-HYG017N10NS1TA_C5205219.pdf

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