Power MOSFET HUAYI HYG023N04LS1B N Channel Enhancement Mode Device with Avalanche Tested Reliability
Key Attributes
Model Number:
HYG023N04LS1B
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
170A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
45pF
Number:
1 N-channel
Output Capacitance(Coss):
809pF
Input Capacitance(Ciss):
4.032nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
58.7nC@10V
Mfr. Part #:
HYG023N04LS1B
Package:
TO-263-2L
Product Description
Product Overview
The HYG023N04LS1P/B is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for power management applications. It features a low on-resistance (RDS(ON)) of 2.1 m typ. at VGS = 10V and 2.9 m typ. at VGS = 4.5V, with a continuous drain current of 170A. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available. It is suitable for DC/DC power management.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings (Tc=25C Unless Otherwise Noted) | ||||||
| Drain-Source Voltage | VDSS | V | 40 | |||
| Gate-Source Voltage | VGSS | V | 20 | |||
| Junction Temperature Range | TJ | C | -55 | 175 | ||
| Storage Temperature Range | TSTG | C | -55 | 175 | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | A | 170 | ||
| Pulsed Drain Current | IDM | Tc=25C | A | 570 | ||
| Continuous Drain Current | ID | Tc=25C | A | 170 | ||
| Continuous Drain Current | ID | Tc=100C | A | 120 | ||
| Maximum Power Dissipation | PD | Tc=25C | W | 150 | ||
| Maximum Power Dissipation | PD | Tc=100C | W | 75 | ||
| Thermal Resistance, Junction-to-Case | RJC | C/W | 1.0 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | ** | C/W | 62.5 | ||
| Single Pulsed-Avalanche Energy | EAS | *** L=0.3mH | mJ | 450** | ||
| Electrical Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS= 250A | V | 40 | - | - |
| Drain-to-Source Leakage Current | IDSS | VDS=40V,VGS=0V | A | - | 1 | |
| Drain-to-Source Leakage Current | IDSS | TJ=125C | A | - | 50 | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS= 250A | V | 1 | 1.9 | 3 |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | nA | - | 100 | |
| Drain-Source On-State Resistance | RDS(ON) | VGS= 10V,IDS= 40A | m | 2.1 | 2.6 | |
| Drain-Source On-State Resistance | RDS(ON) | VGS= 4.5V,IDS= 40A | m | 2.9 | 3.5 | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=40A,VGS=0V | V | 0.8 | 1.2 | |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/s | ns | 33.3 | - | |
| Reverse Recovery Charge | Qrr | nC | 29.5 | - | ||
| Dynamic Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 2 | - | ||
| Input Capacitance | Ciss | VGS=0V, VDS= 25V, Frequency=1MHz | pF | 4032 | - | |
| Output Capacitance | Coss | pF | 809 | - | ||
| Reverse Transfer Capacitance | Crss | pF | 45 | - | ||
| Turn-on Delay Time | td(ON) | VDD= 20V,RG=4, IDS=20A,VGS= 10V | ns | 14 | - | |
| Turn-on Rise Time | Tr | ns | 49 | - | ||
| Turn-off Delay Time | td(OFF) | ns | 42 | - | ||
| Turn-off Fall Time | Tf | ns | 43 | - | ||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 32V, VGS= 10V, IDs= 20A | nC | 58.7 | - | |
| Total Gate Charge | Qg | VGS=4.5V | nC | 27.4 | - | |
| Gate-Source Charge | Qgs | nC | 15.1 | - | ||
| Gate-Drain Charge | Qgd | nC | 9.3 | - | ||
2409302203_HUAYI-HYG023N04LS1B_C2986715.pdf
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