P Channel Enhancement Mode MOSFET HUAYI HYG400P10LR1B with 100V Drain Source Voltage and 40A Current
Key Attributes
Model Number:
HYG400P10LR1B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+175℃
RDS(on):
65mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
121pF@25V
Number:
1 P-Channel
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
5.402nF@25V
Gate Charge(Qg):
79nC@10V
Mfr. Part #:
HYG400P10LR1B
Package:
TO-263-2L
Product Description
Product Overview
The HYG400P10LR1P/B is a P-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a -100V drain-source voltage and -40A continuous drain current, with low on-state resistance (RDS(ON) = 42m typ. @ VGS = -10V). This MOSFET is 100% avalanche tested and offers a reliable and rugged design. It is available in lead-free and green (RoHS compliant) versions. Applications include portable equipment, battery-powered systems, DC-DC converters, and motor control.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, Halogen Free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight)
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) (m) @ VGS=-10V | RDS(ON) (m) @ VGS=-4.5V | EAS (mJ) |
| HYG400P10LR1P/B | TO-220FB-3L | -100 | -40 | 42 (typ.) | 48 (typ.) | 270 (L=0.3mH) |
| HYG400P10LR1P/B | TO-263-2L | -100 | -40 | 42 (typ.) | 48 (typ.) | 270 (L=0.3mH) |
| Symbol | Parameter | Test Conditions | Unit | Min | Typ. | Max |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS= -250A | V | -100 | - | - |
| IDSS | Drain-to-Source Leakage Current | VDS= -100V,VGS=0V | A | - | - | -1 |
| IDSS | Drain-to-Source Leakage Current | TJ=55C | A | - | - | -5 |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS= -250A | V | -1 | -1.8 | -3 |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | nA | - | - | 100 |
| VSD* | Diode Forward Voltage | ISD= -20A,VGS=0V | V | - | -0.8 | -1.3 |
| trr | Reverse Recovery Time | ISD=-20A,dISD/dt=100A/s | ns | - | 27 | - |
| Qrr | Reverse Recovery Charge | nC | - | 37 | - |
| Symbol | Parameter | Test Conditions | Unit | Typ. |
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 9.8 | |
| Ciss | Input Capacitance | VGS=0V, VDS= -25V, Frequency=1.0MHz | pF | 5402 |
| Coss | Output Capacitance | pF | 188 | |
| Crss | Reverse Transfer Capacitance | pF | 121 | |
| Qg | Total Gate Charge | VDS = -50V, VGS= -10V, ID= -20A | nC | 79 |
| Qgs | Gate-Source Charge | nC | 15.6 | |
| Qgd | Gate-Drain Charge | nC | 14.1 |
2409302204_HUAYI-HYG400P10LR1B_C2977787.pdf
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