Advanced Trench Fieldstop IGBT4 Infineon FS25R12W1T4 B11 with compact design and thermal management
Key Attributes
Model Number:
FS25R12W1T4_B11
Product Custom Attributes
Td(off):
180ns
Pd - Power Dissipation:
205W
Td(on):
50ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.05nF
Input Capacitance(Cies):
1.45nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@0.8mA
Operating Temperature:
-40℃~+150℃
Gate Charge(Qg):
0.2uC
Pulsed Current- Forward(Ifm):
50A
Switching Energy(Eoff):
2.2mJ
Turn-On Energy (Eon):
2.9mJ
Mfr. Part #:
FS25R12W1T4_B11
Package:
Through Hole,62.8x33.8mm
Product Description
Product Overview
The FS25R12W1T4_B11 is an EasyPACK module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode with PressFIT and NTC. It offers low switching losses, low VCEsat with a positive temperature coefficient, and a compact design with an Al2O3 substrate for low thermal resistance. This module is suitable for applications such as air conditioning, motor drives, servo drives, and UPS systems.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Al2O3 substrate
- Color: Not specified
- Certifications: UL approved (E83335)
Technical Specifications
| Parameter | Value | Unit | Conditions |
| IGBT, Inverter | |||
| Collector-emitter voltage | 1200 | V | Tvj = 25C |
| Continuous DC collector current | 25 | A | TC = 100C, Tvj max = 175C |
| Continuous DC collector current | 45 | A | TC = 25C, Tvj max = 175C |
| Repetitive peak collector current | 50 | A | tP = 1 ms |
| Total power dissipation | 205 | W | TC = 25C, Tvj max = 175C |
| Gate-emitter peak voltage | +/-20 | V | |
| Collector-emitter saturation voltage | 1.85 - 2.25 | V | IC = 25 A, VGE = 15 V, Tvj = 25C - 150C |
| Gate threshold voltage | 5.0 - 6.5 | V | IC = 0.80 mA, VCE = VGE, Tvj = 25C |
| Gate charge | 0.20 | C | VGE = -15 V ... +15 V |
| Input capacitance | 1.45 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Reverse transfer capacitance | 0.05 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Collector-emitter cut-off current | 1.0 | mA | VCE = 1200 V, VGE = 0 V, Tvj = 25C |
| Gate-emitter leakage current | 400 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C |
| Turn-on delay time | 0.05 | s | IC = 25 A, VCE = 600 V, VGE = 15 V, RGon = 20 , Tvj = 25C - 150C |
| Rise time | 0.027 - 0.03 | s | IC = 25 A, VCE = 600 V, VGE = 15 V, RGon = 20 , Tvj = 25C - 150C |
| Turn-off delay time | 0.18 - 0.29 | s | IC = 25 A, VCE = 600 V, VGE = 15 V, RGoff = 20 , Tvj = 25C - 150C |
| Fall time | 0.16 - 0.215 | s | IC = 25 A, VCE = 600 V, VGE = 15 V, RGoff = 20 , Tvj = 25C - 150C |
| Turn-on energy loss per pulse | 1.90 - 2.90 | mJ | IC = 25 A, VCE = 600 V, LS = 60 nH, VGE = 15 V, RGon = 20 , Tvj = 25C - 150C |
| Turn-off energy loss per pulse | 1.40 - 2.20 | mJ | IC = 25 A, VCE = 600 V, LS = 60 nH, VGE = 15 V, RGoff = 20 , Tvj = 25C - 150C |
| Short circuit data | 90 | A | VGE 15 V, VCC = 800 V, Tvj = 150C, tP 10 s |
| Thermal resistance, junction to case (per IGBT) | 0.66 - 0.74 | K/W | |
| Thermal resistance, case to heatsink (per IGBT) | 0.80 | K/W | Paste = 1 W/(mK) |
| Temperature under switching conditions | -40 - 150 | C | |
| Diode, Inverter | |||
| Repetitive peak reverse voltage | 1200 | V | Tvj = 25C |
| Continuous DC forward current | 25 | A | |
| Repetitive peak forward current | 50 | A | tP = 1 ms |
| It - value | 90.0 - 80.0 | As | VR = 0 V, tP = 10 ms, Tvj = 125C - 150C |
| Forward voltage | 1.75 - 2.25 | V | IF = 25 A, VGE = 0 V, Tvj = 25C - 150C |
| Peak reverse recovery current | 39.0 - 41.0 | A | IF = 25 A, - diF/dt = 1200 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C |
| Recovered charge | 2.40 - 4.40 | C | IF = 25 A, - diF/dt = 1200 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C |
| Reverse recovery energy | 0.90 - 1.70 | mJ | IF = 25 A, - diF/dt = 1200 A/s, VR = 600 V, VGE = -15 V, Tvj = 25C - 150C |
| Thermal resistance, junction to case (per diode) | 0.95 - 1.05 | K/W | |
| Thermal resistance, case to heatsink (per diode) | 0.85 | K/W | Paste = 1 W/(mK) |
| Temperature under switching conditions | -40 - 150 | C | |
| NTC-Thermistor | |||
| Rated resistance | 5.00 | k | TC = 25C |
| Deviation of R100 | -5 - 5 | % | TC = 100C, R100 = 493 |
| Power dissipation | 20.0 | mW | TC = 25C |
| B-value (B25/50) | 3375 | K | |
| B-value (B25/80) | 3411 | K | |
| B-value (B25/100) | 3433 | K | |
| Module | |||
| Isolation test voltage | 2.5 | kV | RMS, f = 50 Hz, t = 1 min. |
| Creepage distance (terminal to heatsink) | 11.5 | mm | |
| Creepage distance (terminal to terminal) | 6.3 | mm | |
| Clearance (terminal to heatsink) | 10.0 | mm | |
| Clearance (terminal to terminal) | 5.0 | mm | |
| Comperative tracking index | > 200 | ||
| Stray inductance module | 25 | nH | LsCE |
| Module lead resistance, terminals - chip (per switch) | 4.50 | m | TC = 25C |
| Storage temperature | -40 - 125 | C | |
| Weight | 24 | g | |
2411220241_Infineon-FS25R12W1T4-B11_C535474.pdf
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