N Channel Enhancement Mode MOSFET HXY MOSFET 1N60G Designed for Low Gate Voltage and Power Switching
Key Attributes
Model Number:
1N60G
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
1 N-channel
Output Capacitance(Coss):
19pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
119pF
Gate Charge(Qg):
4nC@10V
Mfr. Part #:
1N60G
Package:
SOT-223
Product Description
Product Overview
The 1N60G is an N-Channel Enhancement Mode MOSFET designed for excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. Its advanced trench technology makes it suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Product ID: 1N60G
- Package: SOT-223
- Marking: 1N60G
- Origin: Shenzhen, China
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 600 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | 1 | A | ||
| IDM | Pulsed Drain Current | 4.8 | A | ||
| PD@TA=25 | Total Power Dissipation | 1 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| RJA | Thermal Resistance Junction-ambient (Steady State) | 62.5 | /W | ||
| BVDSS | Drain-Source Breakdown Voltage | 600 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | 9.5 | 12 | Ω | |
| VGS(th) | Gate Threshold Voltage | 2 | 4 | V | |
| IDSS | Drain-Source Leakage Current | 1 | uA | ||
| IGSS | Gate-Source Leakage Current | ±100 | nA | ||
| gfs | Forward Transconductance | 35 | S | ||
| Rg | Gate Resistance | 1.7 | Ω | ||
| Qg | Total Gate Charge (4.5V) | 4 | nC | ||
| Qgs | Gate-Source Charge | 0.9 | |||
| Qgd | Gate-Drain Charge | 2.5 | |||
| Td(on) | Turn-On Delay Time | 4 | ns | ||
| Tr | Rise Time | 24 | |||
| Td(off) | Turn-Off Delay Time | 6 | |||
| Tf | Fall Time | 24 | |||
| Ciss | Input Capacitance | 119 | pF | ||
| Coss | Output Capacitance | 19 | |||
| Crss | Reverse Transfer Capacitance | 2 | |||
| IS | Continuous Source Current | 1 | A | ||
| ISM | Pulsed Source Current | 4.8 | A | ||
| VSD | Diode Forward Voltage | 1.4 | V | ||
| trr | Reverse Recovery Time | 160 | nS | ||
| Qrr | Reverse Recovery Charge | 0.3 | nC |
2509181523_HXY-MOSFET-1N60G_C20611923.pdf
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