P Channel MOSFET HXY MOSFET FDMS6681Z HXY Suitable for Switching Applications and Battery Protection
Key Attributes
Model Number:
FDMS6681Z-HXY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
140pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.45nF@25V
Pd - Power Dissipation:
120W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
FDMS6681Z-HXY
Package:
DFN-8(5x6)
Product Description
Product Overview
The FDMS6681Z is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. It utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications.
Product Attributes
- Brand: HXY
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: DFN5X6-8L(Power(5x6))
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | -100 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | -70 | A | |||
| IDM | Pulsed Drain Current | -250 | A | |||
| EAS | Single Pulse Avalanche Energy | 80 | mJ | |||
| IAS | Avalanche Current | -70 | A | |||
| PD@TC=25 | Total Power Dissipation | 120 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | 50 | /W | |||
| RJC | Thermal Resistance Junction-Case | 1.6 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-20A | 4.0 | m℆ | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-15A | 6.0 | m℆ | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=55 | -5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.2 | ℆ | ||
| Qg | Total Gate Charge (-10V) | VDS=-15V , VGS=-10V , ID=-18A | 60 | nC | ||
| Qgs | Gate-Source Charge | 9 | ||||
| Qgd | Gate-Drain Charge | 15 | ||||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3℆, ID=-20A | 17 | ns | ||
| Tr | Rise Time | 40 | ||||
| Td(off) | Turn-Off Delay Time | 55 | ||||
| Tf | Fall Time | 13 | ||||
| Ciss | Input Capacitance | VDS=-25V , VGS=0V , f=1MHz | 3450 | pF | ||
| Coss | Output Capacitance | 255 | ||||
| Crss | Reverse Transfer Capacitance | 140 | ||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -100 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-20A , di/dt=100A/µs , TJ=25 | 72 | nS | ||
| Qrr | Reverse Recovery Charge | nC |
2509181739_HXY-MOSFET-FDMS6681Z-HXY_C5148667.pdf
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