Industrial grade Infineon BFP740FESDH6327XTSA1 NPN RF transistor featuring 21 dBm RF input power and 2 kV ESD protection
Key Attributes
Model Number:
BFP740FESDH6327XTSA1
Product Custom Attributes
Current - Collector Cutoff:
400nA
Pd - Power Dissipation:
160mW
Transition Frequency(fT):
47GHz
Type:
NPN
Current - Collector(Ic):
45mA
Collector - Emitter Voltage VCEO:
4.2V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BFP740FESDH6327XTSA1
Package:
TSFP-4
Product Description
Product Overview
The BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) featuring integrated ESD protection. It offers a unique combination of high RF performance and robustness, with a maximum RF input power of 21 dBm and 2 kV ESD robustness (HBM). This transistor is qualified for industrial applications and is suitable for various wireless communication systems, satellite communication, multimedia applications, and ISM applications.
Product Attributes
- Brand: Infineon
- Material: SiGe:C
- Certifications: JEDEC47/20/22
Technical Specifications
| Product Name / Ordering Code | Package | Pin Configuration | Marking | Pieces / Reel | VCEO (V) | VCBO (V) | VCES (V) | IB (mA) | IC (mA) | PRFin (dBm) | VESD (kV) | Ptot (mW) | TJ (C) | TStg (C) | RthJS (K/W) | V(BR)CEO (V) | ICES (nA) | ICBO (nA) | IEBO (A) | hFE | fT (GHz) | CCB (pF) | CCE (pF) | CEB (pF) | Gms (dB) @ 2.4 GHz | NFmin (dB) @ 2.4 GHz | Gms (dB) @ 5.5 GHz | NFmin (dB) @ 5.5 GHz | OIP3 (dBm) @ 5.5 GHz |
| BFP740FESD / BFP740FESDH6327XTSA1 | TSFP-4-1 | 1 = B, 2 = E, 3 = C, 4 = E | T7s | 3000 | 4.2 | 4.9 | 4.2 | -10 to 5 | 45 | 21 | 2 | 160 | 150 | -55 to 150 | 315 | 4.2 to 4.7 | 400 | 400 | 10 | 160 to 400 | 47 | 0.08 | 0.4 | 0.5 | 26 | 0.6 | 20.5 | 0.8 | 23.5 |
2410121605_Infineon-BFP740FESDH6327XTSA1_C17591844.pdf
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