High gain broadband amplifier transistor Infineon BFP183WH6327XTSA1 low noise silicon bipolar device
Key Attributes
Model Number:
BFP183WH6327XTSA1
Product Custom Attributes
Pd - Power Dissipation:
450mW
Transition Frequency(fT):
8.5GHz
Type:
NPN
Current - Collector(Ic):
65mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-
Mfr. Part #:
BFP183WH6327XTSA1
Package:
SOT-343-3D
Product Description
Product Overview
The BFP183W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents from 2 mA to 30 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This device is Pb-free (RoHS compliant) and halogen-free, with qualification reports available according to AEC-Q101. It is an ESD-sensitive device and requires careful handling.
Product Attributes
- Brand: Infineon Technologies
- Package: SOT343
- Certifications: AEC-Q101
- Compliance: Pb-free (RoHS compliant), Halogen-free
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Maximum Ratings | ||||
| Collector-emitter voltage | VCEO | 12 | V | |
| Collector-emitter voltage | VCES | 20 | V | |
| Collector-base voltage | VCBO | 20 | V | |
| Emitter-base voltage | VEBO | 2 | V | |
| Collector current | IC | 65 | mA | |
| Base current | IB | 3 | mA | |
| Total power dissipation | Ptot | 450 | mW | TS 58 C |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TStg | -55 ... 150 | C | |
| Thermal Resistance | ||||
| Junction - soldering point | RthJS | 205 | K/W | TS is measured on the collector lead at the soldering point to the pcb |
| Electrical Characteristics | ||||
| Collector-emitter breakdown voltage | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 |
| Collector-emitter cutoff current | ICES | 100 | A | VCE = 20 V, VBE = 0 |
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 |
| Emitter-base cutoff current | IEBO | 1 | A | VEB = 1 V, IC = 0 |
| DC current gain | hFE | 70-140 | - | IC = 15 mA, VCE = 8 V, pulse measured |
| Transition frequency | fT | 6-8 | GHz | IC = 25 mA, VCE = 8 V, f = 500 MHz |
| Collector-base capacitance | Ccb | 0.34-0.54 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded |
| Collector emitter capacitance | Cce | 0.27 | pF | VCE = 10 V, f = 1 MHz, VBE = 0, base grounded |
| Emitter-base capacitance | Ceb | 1.1 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0, collector grounded |
| Minimum noise figure | NFmin | 0.9-1.4 | dB | IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz |
| Power gain, maximum stable | Gms | 22 | dB | IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz |
| Power gain, maximum available | Gma | 15.5 | dB | IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz |
| Transducer gain | |S21e| | 17.5 / 11.5 | dB | IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz / 1.8 GHz |
2504101957_Infineon-BFP183WH6327XTSA1_C3199234.pdf
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