EconoDUAL3 IGBT module Infineon FF600R12ME4 with Trench Fieldstop IGBT4 and Emitter Controlled Diode
Key Attributes
Model Number:
FF600R12ME4
Product Custom Attributes
Pd - Power Dissipation:
4.05kW
Td(off):
480ns
Td(on):
160ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
2.05nF
Input Capacitance(Cies):
37nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@23mA
Gate Charge(Qg):
4.4uC
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
1200A
Switching Energy(Eoff):
47mJ
Turn-On Energy (Eon):
62.5mJ
Mfr. Part #:
FF600R12ME4
Package:
Screw Terminals
Product Description
Product Overview
The FF600R12ME4 is an EconoDUAL3 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled Diode with NTC. It offers low VCEsat with a positive temperature coefficient, high power density, and an isolated base plate. Ideal for high power converters, motor drives, servo drives, UPS systems, and wind turbines.
Product Attributes
- Brand: Infineon (implied by module type and datasheet format)
- Model: FF600R12ME4
- Module Type: EconoDUAL3
- IGBT Technology: Trench/Fieldstop IGBT4
- Diode Type: Emitter Controlled Diode
- Integrated Component: NTC Thermistor
Technical Specifications
| Parameter | Unit | Value | Notes |
| VCES | V | 1200 | Collector-emitter voltage |
| IC nom | A | 600 | Continuous DC collector current @ TC = 100C, Tvj max = 175C |
| ICRM | A | 1200 | Repetitive peak collector current (tP = 1 ms) |
| Ptot | W | 4050 | Total power dissipation @ TC = 25C, Tvj max = 175C |
| VGES | V | +/-20 | Gate-emitter peak voltage |
| VCEsat | V | 1.75 - 2.10 | Collector-emitter saturation voltage @ IC = 600 A, VGE = 15 V (Tvj = 25C to 150C) |
| VGEth | V | 5.2 - 6.4 | Gate threshold voltage @ IC = 23.0 mA, VCE = VGE, Tvj = 25C |
| QG | C | 4.40 | Gate charge @ VGE = -15 V ... +15 V |
| RGint | 1.2 | Internal gate resistor @ Tvj = 25C | |
| Cies | nF | 37.0 | Input capacitance @ f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Cres | nF | 2.05 | Reverse transfer capacitance @ f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| ICES | mA | 3.0 | Collector-emitter cut-off current @ VCE = 1200 V, VGE = 0 V, Tvj = 25C |
| IGES | nA | 400 | Gate-emitter leakage current @ VCE = 0 V, VGE = 20 V, Tvj = 25C |
| td on | s | 0.16 - 0.21 | Turn-on delay time, inductive load @ IC = 600 A, VCE = 600 V, VGE = 15 V, RGon = 1.5 (Tvj = 25C to 150C) |
| tr | s | 0.09 - 0.10 | Rise time, inductive load @ IC = 600 A, VCE = 600 V, VGE = 15 V, RGon = 1.5 (Tvj = 25C to 150C) |
| td off | s | 0.48 - 0.65 | Turn-off delay time, inductive load @ IC = 600 A, VCE = 600 V, VGE = 15 V, RGoff = 1.5 (Tvj = 25C to 150C) |
| tf | s | 0.07 - 0.12 | Fall time, inductive load @ IC = 600 A, VCE = 600 V, VGE = 15 V, RGoff = 1.5 (Tvj = 25C to 150C) |
| Eon | mJ | 62.5 - 90.0 | Turn-on energy loss per pulse @ IC = 600 A, VCE = 600 V, LS = 35 nH, VGE = 15 V, di/dt = 5100 A/s (Tvj = 25C to 150C) |
| Eoff | mJ | 47.0 - 79.5 | Turn-off energy loss per pulse @ IC = 600 A, VCE = 600 V, LS = 35 nH, VGE = 15 V, du/dt = 3700 V/s (Tvj = 25C to 150C) |
| ISC | A | 2400 | Short circuit data @ VGE 15 V, VCC = 800 V, Tvj = 150C, tP 10 s |
| RthJC (IGBT) | K/W | 0.037 | Thermal resistance, junction to case per IGBT |
| RthCH (IGBT) | K/W | 0.035 | Thermal resistance, case to heatsink per IGBT (Paste = 1 W/(mK)) |
| Tvj op | C | -40 to 150 | Temperature in switching operation |
| VRRM | V | 1200 | Repetitive peak reverse voltage (Diode) |
| IF | A | 600 | Continuous DC forward current (Diode) |
| IFRM | A | 1200 | Repetitive peak forward current (Diode, tP = 1 ms) |
| It | As | 37500 - 40000 | Limit load integral (Diode, tP = 10 ms, Tvj = 125C to 150C) |
| VF | V | 1.65 - 2.10 | Forward voltage @ IF = 600 A, VGE = 0 V (Tvj = 25C to 150C) |
| IRM | A | 290 - 450 | Peak reverse recovery current @ IF = 600 A, -diF/dt = 5100 A/s (Tvj = 25C to 150C) |
| Qr | C | 62.0 - 130 | Recovered charge @ IF = 600 A, -diF/dt = 5100 A/s (Tvj = 25C to 150C) |
| Erec | mJ | 22.0 - 51.0 | Reverse recovery energy @ IF = 600 A, -diF/dt = 5100 A/s (Tvj = 25C to 150C) |
| RthJC (Diode) | K/W | 0.065 | Thermal resistance, junction to case per diode |
| RthCH (Diode) | K/W | 0.039 | Thermal resistance, case to heatsink per diode (Paste = 1 W/(mK)) |
| R25 | k | 5.00 | NTC Rated resistance @ TC = 25C |
| R/R | % | -5 to 5 | NTC Deviation of R100 @ TC = 100C |
| P25 | mW | 20.0 | NTC Power dissipation @ TC = 25C |
| B25/50 | K | 3375 | NTC B-value |
| B25/80 | K | 3411 | NTC B-value |
| B25/100 | K | 3433 | NTC B-value |
| VISOL | kV | 2.5 | Isolation test voltage RMS, f = 50 Hz, t = 1 min |
| Material (Baseplate) | Cu | Material of module baseplate | |
| Internal isolation | Al2O3 | Basic insulation (class 1, IEC 61140) | |
| Creepage distance (terminal to heatsink) | mm | 14.5 | |
| Creepage distance (terminal to terminal) | mm | 13.0 | |
| Clearance (terminal to heatsink) | mm | 12.5 | |
| Clearance (terminal to terminal) | mm | 10.0 | |
| CTI | > 200 | Comparative tracking index | |
| RthCH (Module) | K/W | 0.009 | Thermal resistance, case to heatsink per module (Paste = 1 W/(mK)) |
| LsCE | nH | 20 | Module stray inductance |
| RCC'+EE' | m | 1.00 | Module lead resistance, terminals - chip per switch @ TC = 25C |
| Tstg | C | -40 to 125 | Storage temperature |
| Mounting torque (Module M5) | Nm | 3.00 - 6.00 | Mounting torque for module mounting |
| Terminal connection torque (Screw M6) | Nm | 3.0 - 6.0 | Terminal connection torque |
| Weight | g | 345 |
2410121850_Infineon-FF600R12ME4_C541106.pdf
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