IGBT 650V 20A transistor JIAENSEMI JNG20T65FJS1 suitable for motor control and inverter applications
Key Attributes
Model Number:
JNG20T65FJS1
Product Custom Attributes
Td(off):
120ns
Pd - Power Dissipation:
53W
Td(on):
21ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
13pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@1mA
Gate Charge(Qg):
21nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
62ns
Switching Energy(Eoff):
460uJ
Turn-On Energy (Eon):
370uJ
Input Capacitance(Cies):
1.7nF
Pulsed Current- Forward(Ifm):
80A
Output Capacitance(Coes):
72pF
Mfr. Part #:
JNG20T65FJS1
Package:
TO-220F
Product Description
IGBT 650V, 20A
This IGBT offers high ruggedness performance with a 10s short circuit capability, making it ideal for applications requiring high efficiency in motor control and excellent current sharing in parallel operation. It is designed for use in home appliances, motor drives, and general inverter systems.
Product Attributes
- Brand: JIAEN Semiconductor Co., Ltd
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Value | Units | Conditions |
|---|---|---|---|
| Collector-Emitter Voltage (VCES) | 650 | V | - |
| Gate-Emitter Voltage (VGES) | +20 | V | - |
| Continuous Collector Current (IC) @ TC=25 | 40 | A | - |
| Continuous Collector Current (IC) @ TC=100 | 20 | A | - |
| Pulsed Collector Current (ICM) | 80 | A | Note 1 |
| Diode Continuous Forward Current (IF) @ TC=100 | 20 | A | - |
| Diode Maximum Forward Current (IFM) | 80 | A | Note 1 |
| Short Circuit Withstand Time (tsc) | 10 | s | - |
| Maximum Power Dissipation (PD) @ TC=25 | 53 | W | - |
| Maximum Power Dissipation (PD) @ TC=100 | 26 | W | - |
| Operating Junction Temperature Range (TJ) | -40 to +175 | - | |
| Storage Temperature Range (TSTG) | -55 to +150 | - | |
| Thermal Resistance, Junction to case (Rth j-c) for IGBT | 2.8 | / W | - |
| Thermal Resistance, Junction to case (Rth j-c) for Diode | 4.1 | / W | - |
| Thermal Resistance, Junction to Ambient (Rth j-a) | 50 | / W | - |
| Collector-Emitter Breakdown Voltage (BVCES) | 650 | V | VGE= 0V, IC= 250uA |
| Collector-Emitter Leakage Current (ICES) | 50 | uA | VCE= 650V, VGE= 0V |
| Gate Leakage Current, Forward (IGES) | 100 | nA | VGE=20V, VCE= 0V |
| Gate Threshold Voltage (VGE(th)) | 5.2 - 6.2 | V | VGE= VCE, IC=1mA |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.6 | V | VGE=15V, IC= 20A |
| Total Gate Charge (Qg) | 21 | nC | VCC=520V, VGE=15V, IC=20A |
| Turn-on Delay Time (td(on)) | 21 | ns | VCC=400V, VGE=15V, IC=20A, RG=10, Inductive Load, TC=25 |
| Turn-on Rise Time (tr) | 23 | ns | - |
| Turn-off Delay Time (td(off)) | 120 | ns | - |
| Turn-off Fall Time (tf) | 63 | ns | - |
| Turn-on Switching Loss (Eon) | 0.37 | mJ | - |
| Turn-off Switching Loss (Eoff) | 0.46 | mJ | - |
| Total Switching Loss (Ets) | 0.83 | mJ | - |
| Input Capacitance (Cies) | 1700 | pF | VCE=30V, VGE=0V, f = 1MHz |
| Output Capacitance (Coes) | 72 | pF | - |
| Reverse Transfer Capacitance (Cres) | 13 | pF | - |
| Diode Forward Voltage (VF) | 1.5 | V | IF=20A |
| Diode Reverse Recovery Time (trr) | 62 | ns | VCE = 400V, IF = 20A, dif/dt = 500A/us |
| Diode peak Reverse Recovery Current (irr) | 12 | A | - |
| Diode Reverse Recovery Charge (Qrr) | 472 | nC | - |
2509021810_JIAENSEMI-JNG20T65FJS1_C51484247.pdf
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