N Channel Enhancement Mode MOSFET Jilin Sino Microelectronics JCS4N60RB DPAK 600V 4A Low Gate Charge
Key Attributes
Model Number:
JCS4N60RB-DPAK
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
124pF
Input Capacitance(Ciss):
1.1nF
Pd - Power Dissipation:
165.56W
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
JCS4N60RB-DPAK
Package:
DPAK
Product Description
JCS4N60B N-Channel MOSFET
The JCS4N60B is a high-performance N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic lamp ballasts, and LED power supplies. It offers low gate charge, fast switching speeds, and improved dv/dt capability, with 100% avalanche testing for enhanced reliability. This RoHS-compliant product is available in various package types and configurations.
Product Attributes
- Brand: Jilin Sino-microelectronics co., Ltd
- Origin: China
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rds(on) (Vgs=10V) () | Qg (nC) |
| JCS4N60VB-V-B | JCS4N60VB | IPAK | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60RB-R-B | JCS4N60RB | DPAK | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60BB-B-B | JCS4N60BB | TO-262 | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60SB-S-B | JCS4N60SB | TO-263 | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60CB-C-B | JCS4N60CB | TO-220C | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60FB-F-B | JCS4N60FB | TO-220MF | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60FB-F2-B | JCS4N60FB | TO-220MF-K2 | 4.0 | 600 | 2.4 | 18.1 |
| JCS4N60VB-V2-B | JCS4N60VB | IPAK-S2 | 4.0 | 600 | 2.4 | 18.1 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit | Notes |
| Drain-Source Voltage | VDSS | 600 | V | |
| Continuous Drain Current | ID | 4.0* | A | Drain current limited by maximum junction temperature |
| Gate-Source Voltage | VGSS | 30 | V | |
| Single Pulsed Avalanche Energy | EAS | 610.9 | mJ | L=70mH, IAS=4.0A, VDD=50V, RG=25, Starting TJ=25 |
| Avalanche Current | IAR | 4.0 | A | Pulse width limited by maximum junction temperature |
| Peak Diode Recovery dv/dt | dv/dt | 5.5 | V/ns | ISD 4.0A,di/dt 200A/s,VDDBVDSS, Starting TJ=25 |
| Power Dissipation | PD | 165.56 (TC=25) | W | Derate above 25: 1.32 W/ |
| Operating and Storage Temperature Range | TJ,TSTG | -55+150 |
Electrical Characteristics
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V, TC=25 | - | - | 10 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=2A | - | 1.7 | 2.4 | |
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | - | 702 | 1100 | pF |
| Output capacitance | Coss | - | 89 | 124 | pF | |
| Reverse transfer capacitance | Crss | - | 2.69 | 12 | pF | |
| Turn-On delay time | td(on) | VDD=300V,ID=4.0A,RG=25 | - | 9.8 | 20 | ns |
| Turn-On rise time | tr | - | 23.7 | 50 | ns | |
| Turn-Off delay time | td(off) | - | 33.5 | 70 | ns | |
| Turn-Off Fall time | tf | - | 25.8 | 55 | ns | |
| Total Gate Charge | Qg | VDS =480V , ID=4.0A VGS =10V | - | 13.3 | 28 | nC |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=4.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=4.0A dIF/dt=100A/s | - | 383 | - | ns |
2411201841_Jilin-Sino-Microelectronics-JCS4N60RB-DPAK_C272518.pdf
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