N channel MOSFET Jilin Sino Microelectronics JCS7N80FH with RoHS compliance and low Crss capacitance
Key Attributes
Model Number:
JCS7N80FH
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.6Ω@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
-
Output Capacitance(Coss):
150pF
Input Capacitance(Ciss):
1.288nF@25V
Pd - Power Dissipation:
195W
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
JCS7N80FH
Package:
TO-220MF
Product Description
Product Overview
The JCS7N80H is a N-channel enhancement mode MOSFET designed for applications such as switched-mode power supplies and electronic ballasts. It features low gate charge, low Crss (typical 11pF), fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd
- Certifications: RoHS
Technical Specifications
| Order Codes | Marking | Package | ID (A) | VDSS (V) | Rdson (MAX) () | Qg (Typ.) (nC) |
| JCS7N80FH-F-B / JCS7N80FH-F-BR | N/A | TO-220MF | 7 | 800 | 1.6 | 39 |
| JCS7N80CH-C-B / JCS7N80CH-C-BR | N/A | TO-220C | 7 | 800 | 1.6 | 39 |
| JCS7N80BH-B-B / JCS7N80BH-B-BR | N/A | TO-262 | 7 | 800 | 1.6 | 39 |
| JCS7N80SH-S-B / JCS7N80SH-S-BR / JCS7N80SH-S-A / JCS7N80SH-S-AR | JCS7N80SH | TO-263 | 7 | 800 | 1.6 | 39 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 800 | V |
| Continuous Drain Current | ID | 7 (T=25) / 4.4 (T=100) | A |
| Pulse Drain Current | IDM | 28 | A |
| Gate-Source Voltage | VGSS | 30 | V |
| Single Pulsed Avalanche Energy | EAS | 260 | mJ |
| Avalanche Current | IAR | 7.0 | A |
| Repetitive Avalanche Energy | EAR | 30 | mJ |
| Peak Diode Recovery dv/dt | dv/dt | 4.3 | V/ns |
| Power Dissipation | PD | 195 (TC=25) | W |
| Operating and Storage Temperature Range | TJ, TSTG | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 800 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.92 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=800V,VGS=0V, TC=25 | - | - | 5 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=640V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=3.5A | - | 1.3 | 1.6 | |
| Forward Transconductance | gfs | VDS = 50V, ID=3.5A | - | 5.5 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 1288 | 1700 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 129 | 150 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 11 | 14 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=400V,ID=7A,RG=25 | - | 40 | 80 | ns |
| Turn-On rise time | tr | VDD=400V,ID=7A,RG=25 | - | 105 | 210 | ns |
| Turn-Off delay time | td(off) | VDD=400V,ID=7A,RG=25 | - | 55 | 110 | ns |
| Turn-Off Fall time | tf | VDD=400V,ID=7A,RG=25 | - | 65 | 130 | ns |
| Total Gate Charge | Qg | VDS =640V , ID=7A VGS =10V | - | 39 | 50 | nC |
| Gate-Source charge | Qgs | VDS =640V , ID=7A VGS =10V | - | 7.9 | - | nC |
| Gate-Drain charge | Qgd | VDS =640V , ID=7A VGS =10V | - | 21 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | 7 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | 28 | A | |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=7A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=7A dIF/dt=100A/s | - | 640 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=7A dIF/dt=100A/s | - | 6.0 | - | C |
Thermal Characteristics
| Parameter | Symbol | JCS7N80CH/SH/BH (Max) | JCS7N80FH (Max) | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.63 | 2.85 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 41 | 62.5 | /W |
2409280102_Jilin-Sino-Microelectronics-JCS7N80FH_C2693263.pdf
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