Plastic encapsulated diode rf resistor JSCJ BAP64-05W in sot 323 package for rf attenuators and switches
Key Attributes
Model Number:
BAP64-05W
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@20V
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
175V
Diode Configuration:
1 Pair Common Cathode
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.1V@50mA
Current - Rectified:
100mA
Mfr. Part #:
BAP64-05W
Package:
SOT-323
Product Description
Product Overview
The BAP64-04W, 05W, and 06W are high-voltage, current-controlled RF resistors designed for use in RF attenuators and switches. They offer low diode capacitance, low diode forward resistance, and low series inductance, making them suitable for applications up to 3 GHz.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Material: Plastic-Encapsulated Diodes
- Color: Green molding compound (Solid dot = Green molding compound device, if none, the normal device)
- Package: SOT-323
Technical Specifications
| Model | Continuous Reverse Voltage (VR) | Continuous Forward Current (IF) | Power Dissipation (PD) | Thermal Resistance (RJA) | Junction and Storage Temperature Range (TJ, Tstg) | Forward Voltage (VF) @ IF=50mA | Reverse Current (IR1) @ VR1=175V | Diode Capacitance (Cd1) @ VR=0V, f=1MHz | Diode Forward Resistance (rd1) @ IF=0.5mA, f=100MHz | Charge Carrier Life Time (L) | Series Inductance (LS) @ IF=10mA, f=100MHz |
| BAP64-04W, 05W, 06W | 175 V | 100 mA | 200 mW | 625 C/W | -55~+150 C | 1.1 V | 10 A | 0.52 pF | 40 | 1.55 ns | 1.4 nH (BAP64-04W/06W), 1.4 nH (BAP64-05W) |
2410121912_JSCJ-BAP64-05W_C2911294.pdf
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