Low Gate Charge P Channel Power MOSFET JSCJ CJQ60P05 with High Avalanche Current and Voltage Ratings
Key Attributes
Model Number:
CJQ60P05
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
61mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
117pF@30V
Number:
1 P-Channel
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
2.563nF@30V
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
CJQ60P05
Package:
SOP-8
Product Description
Product Overview
The CJQ60P05 is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and DC-DC converters. Its high-density cell design ensures ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current with an excellent package for good heat dissipation.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: Q60P05
- Package: SOP8
- Marking: Q60P05 XX
- Molding Compound: Green (if solid dot present)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -5 | A | |||
| Pulsed Drain Current | IDM | -25 | A | |||
| Maximum Power Dissipation | PD | 2 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 62.5 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR) DSS | VGS = 0V, ID =-250A | -60 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-48V, VGS =0V | -1.0 | A | ||
| TJ =25 | -100 | |||||
| TJ =125 | 13 | |||||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.5 | -2.0 | -3.5 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =-10V, ID =-5A | 61 | 80 | m | |
| Forward transconductance | gFS | VDS =-15V, ID =-5A | 5 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-30V,VGS =0V, f =1MHz | 256 | pF | ||
| Output capacitance | Coss | 124 | ||||
| Reverse transfer capacitance | Crss | 117 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VDS=-30V,VGS=-10V , ID=-5A | 9 | nC | ||
| Gate-source charge | Qgs | 65 | ||||
| Gate-drain charge | Qg | 52 | ||||
| Turn-on delay time | td(on) | VDS=-30V,VGS=-10V, RL=30, RG=6 | 4.5 | ns | ||
| Turn-on rise time | tr | 7 | ||||
| Turn-off delay time | td(off) | 8 | ||||
| Turn-off fall time | tf | 14 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-3A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -5 | A | |||
| Pulsed drain-source diode forward current | ISM | -25 | A | |||
2403291733_JSCJ-CJQ60P05_C5441040.pdf
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