Low RDS ON N Channel MOSFET JSCJ CJAC2R0SN04C with High Energy Pulse Capability and Heat Dissipation
Key Attributes
Model Number:
CJAC2R0SN04C
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
150A
RDS(on):
3.6mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
52pF
Number:
1 N-channel
Output Capacitance(Coss):
900pF
Input Capacitance(Ciss):
3.06nF
Pd - Power Dissipation:
96W
Gate Charge(Qg):
42.8nC@10V
Mfr. Part #:
CJAC2R0SN04C
Package:
PDFNWB5x6-8L
Product Description
Product Overview
The CJAC2R0SN04C is an N-Channel enhancement mode power field-effect transistor utilizing SGT technology. This advanced technology minimizes on-state resistance, offers superior switching performance, and withstands high energy pulses in avalanche and commutation modes. It is well-suited for high efficiency fast switching applications such as battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supplies. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC2R0SN04C
- Marking: CJAC2R0SN04C
- Package: PDFNWB56-8L
- Material: Plastic-Encapsulate MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25 | 150 | A | ||
| Pulsed Drain Current | IDM | 600 | A | |||
| Single Pulsed Avalanche Energy | EAS | mJ | ||||
| Power Dissipation | PD | 96 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 62.5 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 1.3 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =1mA | 40 | V | ||
| Zero gate voltage drain current | IDSS | VDS =32V, VGS =0V | 2.0 | A | ||
| TJ =25 | 1.0 | A | ||||
| TJ =125 | 100 | A | ||||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.8 | 2.5 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =30A | 1.6 | m | ||
| VGS =4.5V, ID =30A | 2.4 | m | ||||
| Input capacitance | Ciss | VDS =20V,VGS =0V, f =100kHz | 3060 | pF | ||
| Output capacitance | Coss | 900 | pF | |||
| Reverse transfer capacitance | Crss | 52 | pF | |||
| Total gate charge | Qg | VGS=10V, VDS=20V, ID=75A | 42.8 | nC | ||
| Gate-source charge | Qgs | VGS=10V, VDS=20V, ID=75A | 9.3 | nC | ||
| Gate-drain charge | Qgd | VGS=10V, VDS=20V, ID=75A | 7.4 | nC | ||
| Turn-on delay time | td(on) | VDS=20V, VGS=10V, RL=0.27 , Rg=1.6 | 10 | ns | ||
| Turn-on rise time | tr | 2.4 | ns | |||
| Turn-off delay time | td(off) | 45 | ns | |||
| Turn-off fall time | tf | 22.5 | ns | |||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=30A | 1.3 | V | ||
| Continuous drain-source diode forward current | IS | 150 | A | |||
| Pulsed drain-source diode forward current | ISM | 600 | A | |||
| Reverse recovery time | trr | diS/dt = 100A/s, IS = 30A, VDD = 30V | 65 | ns | ||
| Reverse recovery charge | Qrr | diS/dt = 100A/s, IS = 30A, VDD = 30V | 90 | nC | ||
2410121929_JSCJ-CJAC2R0SN04C_C19269076.pdf
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