N channel Power MOSFET JSCJ CJQ07N10 designed for synchronous buck converter and power switching
Key Attributes
Model Number:
CJQ07N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
276pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.848nF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
31.9nC@10V
Mfr. Part #:
CJQ07N10
Package:
SOP-8
Product Description
Product Overview
The CJQ07N10 is a high-performance N-channel Power MOSFET featuring advanced high cell density Trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device is 100% EAS guaranteed and has full function reliability approval. A green device option is available.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOP8
- Marking: Q07N10
- Color: Normal or Green molding compound (indicated by solid dot)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =80V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.2 | 3.0 | V | |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =7A | 25 | 28 | m | |
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =5A | 30 | 38 | m | |
| Forward transconductance | gFS | VDS =5V, ID =7A | 22 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 1848 | pF | ||
| Output capacitance | Coss | 276 | ||||
| Reverse transfer capacitance | Crss | 97.9 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VDS=80V, VGS=10V, ID=7A | 31.9 | nC | ||
| Gate-source charge | Qgs | 5.5 | ||||
| Gate-drain charge | Qg d | 8.8 | ||||
| Turn-on delay time | td(on) | VDD=50V,ID=7A, VGS=10V,RG=3.3, RL=6.7 | 11.4 | ns | ||
| Turn-on rise time | tr | 27.2 | ||||
| Turn-off delay time | td(off) | 34.7 | ||||
| Turn-off fall time | tf | 16.6 | ||||
| Gate Resistance | Rg | f =1MHz, VDS=0V, VGS=0V | 1.9 | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=1A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 7 | A | |||
| Pulsed drain-source diode forward current | ISM | 28 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 7 | A | |||
| Pulsed Drain Current | IDM | 28 | A | |||
| Single Pulsed Avalanche Energy | EAS | (1) | 16 | mJ | ||
| Power Dissipation | PD | 1.4 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Lead Temperature for Soldering | TL | (1/8 from case for 10s) | 260 | |||
2411121115_JSCJ-CJQ07N10_C504126.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
