Portable Power Management MOSFET JSCJ CJMN2012 with Small Package and High Drain Current Capability
Key Attributes
Model Number:
CJMN2012
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@1.8V,5A
Gate Threshold Voltage (Vgs(th)):
350mV
Reverse Transfer Capacitance (Crss@Vds):
450pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.8nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
32nC@4.5V
Mfr. Part #:
CJMN2012
Package:
DFNWB2x2-6L
Product Description
Product Overview
The CJMN2012 is an N-Channel TrenchFET Power MOSFET designed for load switching in portable applications. It features a small DFNWB2x2-6L-J package and offers excellent performance with low on-resistance at various gate-source voltages.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJMN2012
- Package: DFNWB2x2-6L-J
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | (note 1) | 12 | A | ||
| Collector Current-Pulse | IDM | (Note3) | 40 | A | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | uA | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A (note 3) | 0.35 | 0.7 | 1 | V |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =5A (note 3) | 10 | 15 | m | |
| VGS =2.5V, ID =5A (note 3) | 13 | 18 | m | |||
| VGS =1.8V, ID =5A (note 3) | 18 | 30 | m | |||
| Forward tranconductance | gFS | VDS =4V, ID =9.7A (note 3) | 20 | S | ||
| Diode forward voltage | VSD | IS=10A, VGS = 0V (note 3) | 1.2 | V | ||
| Input Capacitance | Ciss | VDS =4V,VGS =0V,f =1MHz (note 4) | 1800 | pF | ||
| Output Capacitance | Coss | VDS =4V,VGS =0V,f =1MHz (note 4) | 650 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =4V,VGS =0V,f =1MHz (note 4) | 450 | pF | ||
| Gate Resistance | Rg | f=1MHz (note 4) | 2.5 | |||
| Turn-on delay time | td(on) | VGEN=4.5V,VDD=4V, ID=10A,Rg=1 RL=0.4 (note 4) | 12 | 20 | ns | |
| Turn-on rise time | tr | VGEN=4.5V,VDD=4V, ID=10A,Rg=1 RL=0.4 (note 4) | 10 | 15 | ns | |
| Turn-off delay time | td(off) | VGEN=4.5V,VDD=4V, ID=10A,Rg=1 RL=0.4 (note 4) | 65 | 100 | ns | |
| Turn-off fall time | tf | VGEN=4.5V,VDD=4V, ID=10A,Rg=1 RL=0.4 (note 4) | 20 | 30 | ns | |
| Total Gate Charge | Qg | VDS=4V,VGS=5V ID=10A (note 4) | 32 | nC | ||
| Gate-Source Charge | Qgs | VDS=4V,VGS=5V ID=10A (note 4) | 2.5 | nC | ||
| Gate-Drain Charge | Qg | VDS=4V,VGS=5V ID=10A (note 4) | 6.5 | nC |
2410121917_JSCJ-CJMN2012_C504122.pdf
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