Power MOSFET N Channel Device JSCJ CJQ18SN06 with Low Gate Charge and High Side Switching Performance
Key Attributes
Model Number:
CJQ18SN06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
40pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
4.15nF@30V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
CJQ18SN06
Package:
SOP-8
Product Description
Product Overview
The CJQ18SN06 is an N-Channel Power MOSFET utilizing shielded gate trench technology. It is designed for high-side switch applications in SMPS and as a load switch, offering excellent RDS(ON) with low gate charge. This device is suitable for a wide variety of applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJQ18SN06
- Device Code: Q18SN06
- Origin: Made by JSCJ
- Material: Plastic-Encapsulate MOSFETS
- Color: Green molding compound device (indicated by solid dot)
- Package: SOP8
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250uA | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =60V, VGS =0V | 1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 2.5 | V | ||
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =12A | 5.5 | 6.5 | m | |
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =12A | 7.0 | 10 | m | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =30V,VGS =0V, f =100KHz | 2057 | pF | ||
| Output capacitance | Coss | 553 | ||||
| Reverse transfer capacitance | Crss | 48 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=30V, ID=10A | 34 | nC | ||
| Gate-source charge | Qgs | 6 | ||||
| Gate-drain charge | Qgd | 5.5 | ||||
| Turn-on delay time | td(on) | VDS=50V,ID=25A , VGS=10V,RG=2 | 11 | ns | ||
| Turn-on rise time | tr | 12 | ||||
| Turn-off delay time | td(off) | 44 | ||||
| Turn-off fall time | tf | 15 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.3 | V | ||
| Continuous drain-source diode forward current | IS | 18 | A | |||
| Pulsed drain-source diode forward current | ISM | 72 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Ta=25) | 18 | A | ||
| Pulsed Drain Current | IDM | 72 | A | |||
| Maximum Power Dissipation | PD | (Ta=25) | 1.4 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Thermal Resistance Junction to Ambient | RJA | (Device mounted on 1 in^2 FR-4 board) | 89 | /W | ||
| Single Pulsed Avalanche Energy | EAS | (Starting TJ = 25, VDD=30V,VGS=10V, L=0.5mH, Rg=25) | 200 | mJ | ||
| Lead Temperature for Soldering | TL | (1/8 from case for 10s) | 260 | |||
2411121115_JSCJ-CJQ18SN06_C504131.pdf
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