TO262K Package Plastic Encapsulated Thyristors JSCJ CT316R-800S 5 Layer Structure TRIACs for Power Control
Key Attributes
Model Number:
CT316R-800S
Product Custom Attributes
Holding Current (Ih):
15mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
160A@20ms
SCR Type:
1 TRIAC
Gate Trigger Voltage (Vgt):
1.3V
Operating Temperature:
-40℃~+125℃@(Tj)
Mfr. Part #:
CT316R-800S
Package:
TO-262-3
Product Description
Product Overview
The CT316R series TRIACs are 5-layer structure devices designed for AC power control applications. They feature a mesa glass passivated technology, high junction temperature capability, and good commutation performance, making them suitable for various industrial and consumer electronics.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by company name and website)
- Material: Plastic-Encapsulate Thyristors
- Package Type: TO-262K
- Certifications: Not specified
Technical Specifications
| Part Number | VDRM/VRRM (V) | IT(RMS) (A) | VTM (V) | IGT (mA) | Package | Description |
| CT316R-600S/C/B | 600 | 16 | 1.55 | S: 10, C: 35, B: 50 | TO-262K | NPNPN 5-layer Structure TRIACs |
| CT316R-800S/C/B | 800 | 16 | 1.55 | S: 10, C: 35, B: 50 | TO-262K | NPNPN 5-layer Structure TRIACs |
Absolute Ratings
| Symbol | Parameter | Test Condition | Value | Unit |
| VDRM/VRRM | Repetitive peak off- state voltage | Tj=25 | 600 / 800 | V |
| IT(RMS) | RMS on-state current | 16 | A | |
| ITSM | Non repetitive surge peak on-state current | Full sine wave, tp=20ms | 160 | A |
| I2t | I2t value | tp=10ms | 140 | A2s |
| dIT/dt | Critical rate of rise of on-state current | IG=2*IGT, tr10ns, F=120HZ, Tj=125 | 50 | A/s |
| IGM | Peak gate current | tp=20s, Tj=125 | 4 | A |
| PG(AV) | Average gate power | Tj=125 | 1 | W |
| TSTG | Storage temperature | -40~+150 | ||
| Tj | Operating junction temperature | -40~+125 |
Electrical Characteristics
| Symbol | Parameter | Test condition | Quadrant | Value | Unit |
| IGT | Gate trigger current | VD=12V, RL =33 , Tj=25 | -- | 1.3 | mA |
| 5 | mA | ||||
| VGT | Gate trigger voltage | IG =1.2IGT | -- | 5 | V |
| VGD | Non-triggering gate voltage | VD=VDRM, Tj=125 | 0.2 | V | |
| IH | Holding current | IT =500mA | - | 30 | mA |
| 50 | mA | ||||
| IL | Latching current | - | 50 | mA | |
| 80 | mA | ||||
| dVD/dt | Critical rate of rise of off-state | VD=67%VDRM, Gate Open, Tj=125 | 1000 | V/s | |
| VTM | On-state Voltage | ITM=23A, tp=380s | 1.55 | V | |
| IDRM / IRRM | Repetitive peak off- state current | VD=VDRM/VRRM, Tj=25 | 10 | A | |
| VD=VDRM/VRRM,Tj=125 | 1 | mA |
Thermal Resistances
| Symbol | Parameter | Value | Unit |
| Rth (j-c) | Junction to case (AC) | 1.2 | /W |
| Rth (j-a) | Junction to ambient | 45 | /W |
Applications
- Heater Control
- Mixer
- Motor Speed Controller
2411121117_JSCJ-CT316R-800S_C527790.pdf
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