JSMSEMI IRFH5406TRPBF JSM 60V 50A N Channel MOSFET Featuring High Avalanche Current and Low On Resistance
Key Attributes
Model Number:
IRFH5406TRPBF-JSM
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-50℃~+150℃
RDS(on):
23mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1.1V
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.89nF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
IRFH5406TRPBF-JSM
Package:
DFN-8L(5x6)
Product Description
Product Overview
The IRFH5406TRPBF is a 60V/50A N-Channel MOSFET designed for power switching applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and excellent stability and uniformity with high EAS. The package is optimized for good heat dissipation, making it suitable for demanding power applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: IRFH5406TRPBF
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Common Ratings (TC=25C Unless Otherwise Noted) | ||||||
| Maximum Power Dissipation | PD | Note1 | - | - | 98 | mJ |
| Single pulse avalanche energy | EAS | - | - | - | 23 | mJ |
| Absolute Maximum Ratings (TA=25C unless otherwise noted) | ||||||
| Continuous Drain Current | ID | TC=25C, Mounted on Large Heat Sink | - | - | 50 | A |
| Pulse Drain Current | IDM | TC=25C | - | - | 190 | A |
| Diode Continuous Forward Current | IS | TC=25C | - | - | 50 | A |
| Storage Temperature Range | TSTG | - | -50 | - | 155 | C |
| Maximum Junction Temperature | TJ | - | - | - | 150 | C |
| Drain-Source Breakdown Voltage | V(BR)DSS | ID=250A, VGS=0V | 60 | - | - | V |
| Gate-Source Voltage | VGS | - | -20 | - | +20 | V |
| Electrical Characteristics (TJ=25C unless otherwise noted) | ||||||
| Drain-Source On-State Resistance | RDS(on) | ID=20A, VGS=4.5V | - | 23 | - | m |
| Drain-Source On-State Resistance | RDS(on) | ID=20A, VGS=10V | - | 17 | - | m |
| Gate Threshold Voltage | VGS(th) | ID=250A, VDS=VGS | - | 1.6 | 2.5 | V |
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=20V | - | - | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=60V | - | - | 1 | uA |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V, f=1MHz | - | 1890 | - | pF |
| Output Capacitance | Coss | - | 115 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 90 | - | pF | |
| Total Gate Charge | Qg | VGS=10V, ID=20A | - | 40 | - | nC |
| Gate Drain Charge | Qgd | VGS=10V, ID=20A | - | 7 | - | nC |
| Gate Source Charge | Qgs | VGS=10V, ID=20A | - | 8.5 | - | nC |
| Turn-on Delay Time | td(on) | RG=3, VGS=10V, RL=6.7, VDS=30V | - | 13 | - | nS |
| Turn-on Rise Time | tr | - | 10 | - | nS | |
| Turn-off Delay Time | td(off) | - | 25 | - | nS | |
| Turn-off Fall Time | tf | - | 60 | - | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | - | 1.2 | - | V |
2311161807_JSMSEMI-IRFH5406TRPBF-JSM_C19193725.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
