Low On Resistance Complementary Trench MOSFET KEXIN KO6604 Featuring N Channel and P Channel Types
Key Attributes
Model Number:
KO6604
Product Custom Attributes
Configuration:
Common Source
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.4A;2.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
115mΩ@1.8V,1A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
63pF@10V;70pF@10V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
320pF@20V;745pF@20V
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
3.8nC@4.5V;11nC@4.5V
Mfr. Part #:
KO6604
Package:
SOT-23-6
Product Description
Product Overview
The AO6604 (KO6604) is a complementary Trench MOSFET designed for various applications. It offers both N-Channel and P-Channel configurations, providing flexibility for circuit design. Key features include low on-resistance and robust performance across different voltage and current ratings.
Product Attributes
- Brand: Kexin
- SMD Type: SOT-23-6
- Website: www.kexin.com.cn
Technical Specifications
| Parameter | Symbol | N-Channel | P-Channel | Unit |
| Features | ||||
| Drain-Source Voltage | VDS | 20 | -20 | V |
| Continuous Drain Current (Ta=25) | ID | 3.4 | -2.5 | A |
| RDS(ON) (VGS = 4.5V) | RDS(ON) | < 65m | m | |
| RDS(ON) (VGS =-4.5V) | RDS(ON) | < 75m | m | |
| Absolute Maximum Ratings (Ta = 25) | ||||
| Drain-Source Voltage | VDS | 20 | -20 | V |
| Gate-Source Voltage | VGS | 8 | 8 | V |
| Continuous Drain Current (Ta=25) | ID | 3.4 | -2.5 | A |
| Continuous Drain Current (Ta=70) | ID | 2.5 | -2 | A |
| Pulsed Drain Current | IDM | 13 | -13 | A |
| Power Dissipation (Ta=25) | PD | 1.1 | 1.1 | W |
| Power Dissipation (Ta=70) | PD | 0.7 | 0.7 | W |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature Range | Tstg | -55 to 150 | ||
| N-Channel Electrical Characteristics (Ta = 25) | ||||
| Drain-Source Breakdown Voltage | VDSS | 20 | V | |
| Gate-Body Leakage Current | IGSS | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | 0.4 - 0.7 - 1 | V | |
| Static Drain-Source On-Resistance | RDS(On) | 51 - 65 (VGS=4.5V) | m | |
| Input Capacitance | Ciss | 205 - 320 | pF | |
| Output Capacitance | Coss | 33 - 63 | pF | |
| Reverse Transfer Capacitance | Crss | 16 - 38 | pF | |
| Total Gate Charge | Qg | 2.9 - 3.8 | nC | |
| Body Diode Reverse Recovery Time | trr | 14 - 19 | ns | |
| Maximum Body-Diode Continuous Current | IS | 1.5 | A | |
| Diode Forward Voltage | VSD | 0.7 - 1 (IS=1A) | V | |
| Zero Gate Voltage Drain Current | IDSS | 150 | A | |
| P-Channel Electrical Characteristics (Ta = 25) | ||||
| Drain-Source Breakdown Voltage | VDSS | -20 | V | |
| Gate-Body leakage current | IGSS | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | -0.4 - -0.65 - -1 | V | |
| Static Drain-Source On-Resistance | RDS(On) | 56 - 75 (VGS=-4.5V) | m | |
| Input Capacitance | Ciss | 560 - 745 | pF | |
| Output Capacitance | Coss | 80 | pF | |
| Reverse Transfer Capacitance | Crss | 70 | pF | |
| Total Gate Charge | Qg | 8.5 - 11 | nC | |
| Body Diode Reverse Recovery Time | trr | 37 - 49 | ns | |
| Maximum Body-Diode Continuous Current | IS | -1.5 | A | |
| Diode Forward Voltage | VSD | -0.7 - -1 (IS=-1A) | V | |
| Zero Gate Voltage Drain Current | IDSS | -5 | A | |
2410121848_KEXIN-KO6604_C489380.pdf
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