45V N Channel 130A SGT MOSFET KIA Semicon Tech KCP2904A ideal component for battery management systems
Key Attributes
Model Number:
KCP2904A
Product Custom Attributes
Drain To Source Voltage:
45V
Current - Continuous Drain(Id):
300A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
110pF
Output Capacitance(Coss):
1.38nF
Input Capacitance(Ciss):
4.195nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
KCP2904A
Package:
TO-220
Product Description
Product Overview
This 130A, 45V N-CHANNEL SGT MOSFET utilizes advanced SGT technology to offer high robustness, reliability, and increased maximum current capability. It provides low power loss and high power density, making it easy to parallel. Ideal for synchronous rectification in AC/DC quick chargers, battery management systems, and uninterruptible power supplies.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KCB2904A (TO-263), KCP2904A (TO-220)
- Technology: SGT
- Channel Type: N-CHANNEL
- Voltage Rating: 45V
- Current Rating: 130A
Technical Specifications
| Parameter | Symbol | Test Condition | Value (typ.) | Value (max.) | Unit |
| Drain-source on-state resistance | RDS(on) | VGS=10V,ID=20A | 2.0 | 2.6 | m |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=250uA | 2 | 4 | V |
| Drain-source breakdown voltage | BVDSS | VGS=0V, ID=250uA | 45 | - | V |
| Continuous drain current (Silicon limit) | ID | TC=25C | - | 130 | A |
| Continuous drain current (Package limit) | ID | TC=25C | - | 300 | A |
| Continuous drain current (Silicon limit) | ID | TC=100C | - | 137 | A |
| Pulsed drain current | ID pulse | TC=25C, tp=100uS | - | 865 | A |
| Gate-Source voltage | VGS | - | 20 | V | |
| Power dissipation | Ptot | TC=25C | - | 125 | W |
| Operating junction and storage temperature | Tj , Tstg | -55 | +150 | C | |
| Junction-to-Case Thermal Resistance | RJC | - | 1.0 | C/W | |
| Junction-to-Ambient Thermal Resistance | RJA | - | 81 | C/W | |
| Zero gate voltage drain current | IDSS | VDS=45V,VGS=0V,Tj=25C | 0.05 | 1 | uA |
| Gate-source leakage current | IGSS | VGS=20V,VDS=0V | - | 100 | nA |
| Input Capacitance | Ciss | VGS=0V, VDS=20V, f=1MHz | 4195 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=20V, f=1MHz | 1380 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=20V, f=1MHz | 110 | - | pF |
| Gate Total Charge | QG | VDS=20V,ID=50A, VGS=10V | 60 | - | nC |
| Body Diode Forward Voltage | VSD | VGS=0V,ISD=20A | 0.78 | 1.2 | V |
| Body Diode Continuous Forward Current | IS | TC=25C | - | 216 | A |
| Body Diode Pulsed Current | IS pulse | TC=25C | - | 865 | A |
| Body Diode Reverse Recovery Time | trr | IF=35A,VR=30V, dI/dt=100A/s | 98 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | IF=35A,VR=30V, dI/dt=100A/s | 199 | - | nC |
2508261745_KIA-Semicon-Tech-KCP2904A_C7465105.pdf
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