Durable Power MOSFET KIA Semicon Tech KND8606B with High Avalanche Energy and 20V Gate Source Voltage
Key Attributes
Model Number:
KND8606B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+175℃
RDS(on):
15mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.8V
Number:
1 N-channel
Input Capacitance(Ciss):
2.8nF@25V
Pd - Power Dissipation:
60W
Gate Charge(Qg):
33nC@48V
Mfr. Part #:
KND8606B
Package:
TO-252
Product Description
Product Overview
This Power MOSFET is produced using KIA's advanced planar stripe DMOS technology, designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses. It is well-suited for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery-operated products.
Product Attributes
- Brand: KIA
- Part Number: KND8606B
- Package: TO-252
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Ratings | Units | Test Conditions |
| Drain-Source Voltage | VDSS | 60 | V | |
| Drain Current (TC=25C) | ID | 35 | A | |
| Drain Current (TC=100C) | ID | 22 | A | |
| Drain Current Pulsed | IDM | 80 | A | (Note 1) |
| Gate-Source Voltage | VGSS | 20 | V | |
| Single Pulsed Avalanche Energy | EAS | 450 | mJ | (Note 2) |
| Avalanche Current | IAR | 35 | A | (Note 1) |
| Repetitive Avalanche Energy | EAR | 12 | mJ | (Note 1) |
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | (Note 3) |
| Power Dissipation (TC=25C) | PD | 60 | W | |
| Derate above 25C | 0.8 | W/C | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +175 | C | |
| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL | 300 | C | |
| Thermal Resistance, Junction-to-Case | RJC | 2.5 | C/W | |
| Thermal Resistance, Case-to-Sink (Typ.) | RJS | C/W | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | C/W | |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V,ID=250uA |
| Breakdown Voltage Temperature Coefficient | BVDSS / TJ | 0.06 | V/ | ID=250uA, Referenced to 25C |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=60V,VGS=0V |
| Zero Gate Voltage Drain Current | IDSS | 10 | uA | VDS=48V,TC=150 |
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS=20V,VDS=0V |
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS=-20V,VDS=0V |
| Gate Threshold Voltage | VGS(th) | 1.8 | V | VDS=VGS,ID=250uA |
| Static Drain-Source On-Resistance | RDS(on) | 15 | m | VGS=10V,ID=20A |
| Forward Transconductance | gFS | 22 | S | VDS=25V,ID=25A (Note 4) |
| Input Capacitance | Ciss | 2800 | pF | VDS=25V,VGS=0V, f=1.0MHz |
| Output Capacitance | Coss | 200 | pF | |
| Reverse Transfer Capacitance | Crss | 100 | pF | |
| Turn-On Delay Time | td(on) | 15 | ns | VDD=30V,ID=25A, RG=25 (Note 4,5) |
| Turn-On Rise Time | tr | 105 | ns | |
| Turn-Off Delay Time | td(off) | 60 | ns | |
| Turn-Off Fall Time | tf | 65 | ns | |
| Total Gate Charge | Qg | 33 | nC | VDS=48V,ID=25A, VGS=10V (Note 4,5) |
| Gate-Source Charge | Qgs | 8.5 | nC | |
| Gate-Drain Charge | Qgd | 14 | nC | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 35 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 80 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS=0V, IS=35A |
| Reverse Recovery Time | trr | 60 | ns | VGS=0V,IS=35A, dIF/dt=100A/us (Note 4) |
| Reverse Recovery Charge | Qrr | 80 | nC |
2410121326_KIA-Semicon-Tech-KND8606B_C5156062.pdf
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