High current N channel MOSFET KIA Semicon Tech KNB1906A 230A 60V low conduction loss for UPS systems
Key Attributes
Model Number:
KNB1906A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
230A
Operating Temperature -:
-
RDS(on):
3.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
565pF
Number:
-
Output Capacitance(Coss):
1.24nF
Input Capacitance(Ciss):
7.85nF
Pd - Power Dissipation:
254W
Gate Charge(Qg):
182nC@10V
Mfr. Part #:
KNB1906A
Package:
TO-263-2
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX1906A is a 230A, 60V N-CHANNEL MOSFET designed for high-efficiency power applications. It features a low RDS(on) of 2.2m (typ.) at VGS=10V, minimizing conductive losses. This device is available in lead-free and green options and offers high avalanche current capability, making it suitable for power supplies, UPS systems, and battery management systems.
Product Attributes
- Brand: KIA
- Product Line: KNX1906A
- Device Type: N-CHANNEL MOSFET
- Lead Status: Lead free and green device available
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Drain-source voltage | VDSS | 60 | V | |
| Gate-source voltage | VGSS | +25 | V | |
| Maximum junction temperature | TJ | 150 | C | |
| Storage temperature range | TSTG | -55 to150 | C | |
| Continuous drain current (Silicon limit, TC=25C) | ID | 230 | A | |
| Continuous drain current (Package limit, TC=25C) | ID | 160 | A | Package limitation current |
| Continuous drain current (Silicon limit, TC=100C) | ID | 139 | A | |
| Pulse drain current (TC=25C) | ID Pulse | 640 | A | Tp limited by Tjmax |
| Avalanche energy | EAS | 2112 | mJ | Starting TJ=25C,VDD=50V,VGS=10V,L=1mH.IAS=65A. |
| Maximum power dissipation (TC=25 C) | PD | 254 | w | |
| Soldering temperature | Tsold | 260 | C | wave soldering only allowed at leads1.6mm from case for 10s |
| Thermal resistance, Junction-ambient | RJA | 84 | C/W | The Value of RthJA is measured by placing the device in a still air box which is one cubic foot. |
| Thermal resistance, Junction-case | RJC | 0.49 | C/W | |
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0V,IDS=250A |
| Zero gate voltage drain current | IDSS | 1 | A | VDS=48V, VGS=0V, TJ=125C: 20 A |
| Gate threshold voltage | VGS(th) | 2.0 - 4.0 | V | VDS=VGS, ID=250A |
| Gate leakage current | IGSS | +100 | nA | VGS=+25V, VDS=0V |
| Drain-source on-state resistance | RDS(on)1 | 2.2 - 3.5 | m | VGS=10V,ID=80A, Pulse test |
| Gate resistance | Rg | 1.5 | VDS=0V, VGS=0V,f=1MHz | |
| Diode forward voltage | VSD | 0.9 - 1.4 | V | ISD=80A, VGS=0V |
| Diode continuous forward current | IS | 230 | A | |
| Reverse recovery time | trr | 54 | nS | IF=80A, dlSD/dt=100A/s |
| Reverse recovery charge | Qrr | 115 | nC | |
| Input capacitance | Ciss | 7850 | pF | VDS=30V,VGS=0V, f=1MHz |
| Output capacitance | Coss | 1240 | pF | |
| Reverse transfer capacitance | Crss | 565 | pF | |
| Turn-on delay time | td(on) | 28 | ns | VDD=30V, IDS=80A, RG=3,VGS=10V |
| Rise time | tr | 120 | ns | |
| Turn-off delay time | td(off) | 73 | ns | |
| Fall time | tf | 152 | ns | |
| Total gate charge | Qg | 182 | nC | VDS=30V, VGS=10V ID=80A |
| Gate-source charge | Qgs | 46 | -- | |
| Gate-drain charge | Qg d | 74 | -- |
Ordering Information
| Part Number | Package | Brand |
| KNP1906A | TO-220 | KIA |
| KNB1906A | TO-263 | KIA |
2409302232_KIA-Semicon-Tech-KNB1906A_C1509097.pdf
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