N CHANNEL MOSFET 650V voltage KIA Semicon Tech KIA65R700FS designed for switching power applications
Key Attributes
Model Number:
KIA65R700FS
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
700mΩ@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
1.2pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
360pF
Pd - Power Dissipation:
35W
Gate Charge(Qg):
8nC@10V
Mfr. Part #:
KIA65R700FS
Package:
TO-220F-3
Product Description
Product Overview
This 650V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 65R700, is engineered with advanced super-junction technology. It is optimized to reduce conduction losses, enhance switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. This device is ideal for high-efficiency AC/DC power conversion in switching mode applications.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Model: 65R700
- Channel Type: N-CHANNEL
- Voltage Rating: 650V
- Current Rating: 7A
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | TJ=25C, VGS=0V,ID=250A | 650 | - | - | V |
| TJ=125C, VGS=0V,ID=250A | - | 700 | - | V | ||
| Zero gate voltage drain current | IDSS | VDS=650V ,VGS=0V | - | - | 1 | A |
| VDS=480V ,TC=125C | - | - | 10 | A | ||
| Gate-body leakage current | IGSS | VGS=30V,VDS=0V | - | - | 100 | nA |
| VGS=-30V,VDS=0V | - | - | -100 | nA | ||
| Breakdown voltage temperature coefficient | BVDSS/TJ | ID=250A,referenced to 25C | - | 0.6 | - | V/ C |
| On Characteristics | ||||||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.5 | 3.5 | 4.5 | V |
| Static drain-source on-resistance | RDS(on) | VGS=10V,ID=3.5A | - | 0.6 | 0.7 | |
| Forward transconductance | gFS | VDS=40V,ID=3.5A (note4) | - | 16 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V,VGS=0V, f=1MHz | - | 360 | - | pF |
| Output capacitance | Coss | - | 25 | - | pF | |
| Reverse transfer capacitance | Crss | - | 1.2 | - | pF | |
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VDD=400V,ID=3.5A, RG=20 (note4,5) | - | 25 | - | ns |
| Rise time | tr | - | 55 | - | ns | |
| Turn-off delay time | td(off) | - | 70 | - | ns | |
| Fall time | tf | - | 40 | - | ns | |
| Total gate charge | Qg | VDS=480V,ID=7A , VGS=10V (note4,5) | - | 8 | - | nC |
| Gate-source charge | Qgs | - | 2.0 | - | nC | |
| Gate-drain charge | Qg d | - | 2.7 | - | nC | |
| Drain-source diode characteristics and maximum ratings | ||||||
| Drain-source diode forward voltage | VSD | VGS=0V,ISD=7A | - | - | 1.5 | V |
| Continuous drain-source current | IS | - | - | 7 | A | |
| Pulsed drain-source current | ISM | - | - | 18 | A | |
| Reverse recovery time | trr | VGS=0V,ISD=7A dlF/dt=100A/s (note4) | - | 190 | - | ns |
| Reverse recovery charge | Qrr | - | 2.3 | - | C | |
| Absolute maximum ratings | ||||||
| Drain-source voltage | VDSS | TC= 25 C , unless otherwise noted | - | 650 | - | V |
| Gate-source voltage | VGSS | - | +30 | - | V | |
| Drain current continuous | ID | TC=25C | - | 7* | - | A |
| TC=100C | - | 5* | - | A | ||
| Drain current pulsed (note1) | IDM | - | 10* | - | A | |
| Avalanche energy Repetitive (note1) | EAR | - | 43 | - | mJ | |
| Single pulse (note2) | EAS | - | 86 | - | mJ | |
| Avalanche energy(note1) | IAR | - | 1.7 | - | A | |
| Peak diode recovery dv/dt (note3) | dv/dt | - | 4.5 | - | V/ns | |
| Total power dissipation | PD | TC=25 C | - | 35 | - | W |
| derate above 25 C | - | 0.3 | - | W/C | ||
| Operating and storage temperature range | TJ, TSTG | -55 | - | +150 | C | |
| Maximum lead temperature for soldering purposes, 1/8from case for 5 seconds | TL | - | - | 300 | C | |
| Thermal characteristics | ||||||
| Thermal resistance, Junction-ambient | RthJA | - | 62 | - | C/W | |
| Thermal resistance, case-to-sink typ. | RthJS | - | - | - | C/W | |
| Thermal resistance, Junction-case | RthJC | - | 3.6 | - | C/W | |
2410121331_KIA-Semicon-Tech-KIA65R700FS_C135555.pdf
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