N Channel Power MOSFET LGE G2302S 20V 2.3A PbFree RoHS compliant suitable for LED drivers and switches
Key Attributes
Model Number:
G2302S
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-40℃~+150℃
RDS(on):
60mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
160pF
Gate Charge(Qg):
4nC@5V
Mfr. Part #:
G2302S
Package:
SOT-23
Product Description
Product Overview
The 20V/2.3A N Channel Advanced Power MOSFET (G2302S) is designed for efficient power switching applications. It features low RDS(on) at 4.5V VGS, 3.3V logic-level control, and comes in a Pb-free, RoHS compliant SOT23 package. Ideal for load switches, DC/DC converters, switching circuits, and LED drivers.
Product Attributes
- Brand: LGESemi (implied by URL and email)
- Package: SOT23
- Certifications: PbFree, RoHS Compliant
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Common Ratings (TA=25C Unless Otherwise Noted) | ||||||
| V GS | Gate-Source Voltage | ±10 | V | |||
| V (BR)DSS | Drain-Source Breakdown Voltage | 20 | V | |||
| T J | Maximum Junction Temperature | 150 | ±C | |||
| T STG | Storage Temperature Range | -50 | 150 | ±C | ||
| I DM | Pulse Drain Current | Mounted on Large Heat Sink, TA=25±C | 9 | A | ||
| I D | Continuous Drain Current | TA=25±C | 2.3 | A | ||
| I D | Continuous Drain Current | TA=70±C | 1.8 | A | ||
| P D | Maximum Power Dissipation | TA=25±C | 1 | W | ||
| P D | Maximum Power Dissipation | TA=70±C | 0.8 | W | ||
| θJA R | Thermal Resistance Junction-Ambient | 125 | ±C/W | |||
| Static Electrical Characteristics @ TJ = 25±C (unless otherwise stated) | ||||||
| V (BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250μA | 20 | V | ||
| I DSS | Zero Gate Voltage Drain Current | VDS=20V, VGS=0V, TA=25±C | 1 | μA | ||
| I DSS | Zero Gate Voltage Drain Current | VDS=16V, VGS=0V, TA=125±C | 100 | uA | ||
| I GSS | Gate-Body Leakage Current | VGS=±10V, VDS=0V | ±100 | nA | ||
| V GS(TH) | Gate Threshold Voltage | VDS=VGS, ID=250μA | 0.4 | 0.6 | 1.0 | V |
| R DS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=2A | 48 | 60 | mΩ | |
| R DS(ON) | Drain-Source On-State Resistance | VGS=3.3V, ID=1A | 55 | 70 | mΩ | |
| R DS(ON) | Drain-Source On-State Resistance | VGS=2.5V, ID=1A | 66 | 80 | mΩ | |
| Dynamic Electrical Characteristics @ TJ = 25±C (unless otherwise stated) | ||||||
| C iss | Input Capacitance | VDS=10V, VGS=0V, f=1MHz | 160 | pF | ||
| C oss | Output Capacitance | 30 | pF | |||
| C rss | Reverse Transfer Capacitance | 25 | pF | |||
| Q g | Total Gate Charge | VDS=10V, ID=3A, VGS=5V | 4.0 | nC | ||
| Q gs | Gate Source Charge | 0.4 | nC | |||
| Q gd | Gate Drain Charge | 1.2 | nC | |||
| Switching Characteristics | ||||||
| t d(on) | Turn on Delay Time | VDD=10V, ID=2A, RG=3.3Ω, VGS=4.5V | 8 | ns | ||
| t rt | Turn on Rise Time | 30 | ns | |||
| t d(off) | Turn Off Delay Time | 19 | ns | |||
| t ft | Turn Off Fall Time | 28 | ns | |||
| Source Drain Diode Characteristics | ||||||
| I SD | Source drain current (Body Diode) | TA=25±C | 1.5 | A | ||
| V SD | Forward on voltage | Tj=25±C, ISD=1A, VGS=0V | 0.82 | 1.2 | V | |
2410121653_LGE-G2302S_C27975288.pdf
Related Products
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
