Low gate charge 20V MOSFET Leiditech DMG2302UQ N channel enhancement mode for power switching devices
Key Attributes
Model Number:
DMG2302UQ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.8A
RDS(on):
21mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
140pF
Input Capacitance(Ciss):
780pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
DMG2302UQ
Package:
SOT-23
Product Description
Product Overview
The DMG2302UQ is a 20V N-Channel Enhancement Mode MOSFET manufactured using advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for applications such as lithium battery protection, wireless impact, and mobile phone fast charging, as well as other switching applications.
Product Attributes
- Brand: Leiditech
- Model: DMG2302UQ
- Technology: N-Channel Enhancement Mode MOSFET, Advanced Trench Technology
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current | 6.8 | A | |||
| ID@TA=70 | Continuous Drain Current | 6.0 | A | |||
| IDM | Pulsed Drain Current | 30 | A | |||
| PD@TA=25 | Total Power Dissipation | 1.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient | 1 | 83 | /W | ||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 20 | 22 | V | |
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250A | 0.50 | 0.65 | 1.0 | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V, ID=4A | 16 | 21 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=2.5V, ID=3A | 20 | 30 | m | |
| IDSS | Zero Gate Voltage Drain Current | VDS=20V,VGS=0V | 1 | A | ||
| IGSS | Gate-Body Leakage Current | VGS=10V, VDS=0V | 100 | nA | ||
| Ciss | Input Capacitance | VDS=10V,VGS=0V,f=1MHZ | 780 | pF | ||
| Coss | Output Capacitance | 140 | pF | |||
| Crss | Reverse Transfer Capacitance | 80 | pF | |||
| Qg | Total Gate Charge | VGS=4.5V,VDS=10V,ID=6.8A | 11 | nC | ||
| Qgs | Gate-Source Charge | 2.3 | nC | |||
| Qgd | Gate-Drain Charge | 2.9 | nC | |||
| tD(on) | Turn-on Delay Time | VGS=4.5V, VDS=10V, ID=6.8A RGEN=3 | 9 | ns | ||
| tr | Turn-on Rise Time | 30 | ns | |||
| tD(off) | Turn-off Delay Time | 35 | ns | |||
| tf | Turn-off fall Time | 10 | ns | |||
| VSD | Diode Forward Voltage | IS=6.8A,VGS=0V | 1.2 | V |
Package Marking and Ordering Information
| Device Marking | Device | Package | Reel Size | Tape width | Quantity |
|---|---|---|---|---|---|
| DMG2302UQ | DMG2302UQ | SOT-23 | 180mm | 8 mm | 3000 units |
| DMG2302UQ AE9T | DMG2302UQ | SOT-23 | 180mm | 8 mm | 3000 units |
Dimensions
Package: SOT-23
| Symbol | Dimensions in Millimeters | MIN. | MAX. |
|---|---|---|---|
| A | 0.900 | 1.150 | |
| A1 | 0.000 | 0.100 | |
| A2 | 0.900 | 1.050 | |
| b | 0.300 | 0.500 | |
| c | 0.080 | 0.150 | |
| D | 2.800 | 3.000 | |
| E | 1.200 | 1.400 | |
| E1 | 2.250 | 2.550 | |
| e | 0.950TYP | ||
| e1 | 1.800 | 2.000 | |
| L | 0.550REF | ||
| L1 | 0.300 | 0.500 | |
| 0 | 8 |
Pin Configuration
Device: DMG2302UQ
(Refer to package diagram for specific pin assignments)
2410121514_Leiditech-DMG2302UQ_C3647039.pdf
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