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quality High Voltage Fast Recovery Diode Littelfuse IXYS DSEI12-12A Suitable for SMPS and UPS Applications factory
quality High Voltage Fast Recovery Diode Littelfuse IXYS DSEI12-12A Suitable for SMPS and UPS Applications factory

High Voltage Fast Recovery Diode Littelfuse IXYS DSEI12-12A Suitable for SMPS and UPS Applications

Key Attributes
Model Number: DSEI12-12A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
75A
Reverse Leakage Current (Ir):
250uA@1.2kV
Reverse Recovery Time (trr):
150ns
Operating Junction Temperature Range:
-40℃~+150℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
1.2kV
Pd - Power Dissipation:
78W
Voltage - Forward(Vf@If):
2.58V@12A
Current - Rectified:
12A
Mfr. Part #:
DSEI12-12A
Package:
TO-220AC
Product Description

Product Overview

The DSEI12-12A is a Fast Recovery Epitaxial Diode (FRED) featuring planar passivated chips for excellent performance and reliability. It offers a very short recovery time, improved thermal behavior, and very low Irm-values, contributing to soft reverse recovery for reduced EMI/RFI. This diode is designed for applications requiring antiparallel functionality in high-frequency switching devices, antisaturation, snubber circuits, and as a free-wheeling diode in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). Its avalanche voltage rating ensures reliable operation.

Product Attributes

  • Brand: IXYS
  • Part Number: DSEI12-12A
  • Package: TO-220
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Construction: Planar passivated chips

Technical Specifications

Symbol Definition Conditions Min. Typ. Max. Unit
VRRM Max. repetitive reverse blocking voltage TVJ = 25C 1200 V
VRSM Max. non-repetitive reverse blocking voltage TVJ = 25C 250 V
IF(AV) Average forward current TC = 100C 12 A
IFSM Max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C 75 A
Ptot Total power dissipation TC = 25C 150 W
VF Forward voltage drop IF = 11 A; TVJ = 100C 1.77 2.23 V
VF0 Threshold voltage TVJ = 150C 1.77 V
rF Slope resistance for power loss calculation only IF = 24 A 38 m
IR Reverse current, drain current VR = 1200 V; TVJ = 25C 150 A
IR Reverse current, drain current VR = 1200 V; TVJ = 100C 4 mA
trr Reverse recovery time IF = 11 A; -dIF/dt = 100 A/s; VR = 540 V; TVJ = 100C 300 ns
IRM Max. reverse recovery current IF = 11 A; -dIF/dt = 100 A/s; VR = 540 V; TVJ = 100C 22 A
Qr Reverse recovery charge IF = 11 A; -dIF/dt = 100 A/s; VR = 540 V; TVJ = 100C 22 C
CJ Junction capacitance VR = 600 V; f = 1 MHz; TVJ = 25C 150 pF
RthJC Thermal resistance junction to case 0.50 K/W
RthCH Thermal resistance case to heatsink 0.40 K/W
TJ Virtual junction temperature 150 C
Tstg Storage temperature -40 150 C
Weight 1.7 g
Mounting torque 0.6 Nm
Mounting force with clip 20 60 N

Ordering Information:

  • Ordering Number: DSEI12-12A
  • Marking on Product: DSEI12-12A
  • Delivery Mode: Tube
  • Quantity Code: 50

2410121738_Littelfuse-IXYS-DSEI12-12A_C2763946.pdf

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