N Channel Enhancement Mode MOSFET with 28 Milliohm RDS ON at 10V Gate Voltage Leiditech STD47N10F7AG
Key Attributes
Model Number:
STD47N10F7AG
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
RDS(on):
28mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
250pF@25V
Pd - Power Dissipation:
85W
Input Capacitance(Ciss):
2nF@100V
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
STD47N10F7AG
Package:
TO-252
Product Description
Product Overview
The STD47N10F7AG is an N-Channel Enhancement Mode MOSFET engineered with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications. Its key features include a VDS of 100V, a continuous ID of 50A, and an RDS(ON) of less than 28m at VGS=10V.
Product Attributes
- Brand: Leiditech
- Product ID: STD47N10F7AG
- Package Type: TO-252
- MOSFET Type: N-Channel Enhancement Mode
- Revision: 2.0
- Date: 12.01.2019
Technical Specifications
| Symbol | Parameter | Condition | Limit | Unit |
|---|---|---|---|---|
| General Features | ||||
| VDS | Drain-Source Voltage | 100 | V | |
| ID | Drain Current-Continuous | 50 | A | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V | < 28 | m |
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||
| VDS | Drain-Source Voltage | 100 | V | |
| VGS | Gate-Source Voltage | 20 | V | |
| ID | Drain Current-Continuous | 50 | A | |
| ID (100) | Drain Current-Continuous(TC=100) | 21 | A | |
| IDM | Pulsed Drain Current | 70 | A | |
| PD | Maximum Power Dissipation | 85 | W | |
| Derating factor | 0.57 | W/ | ||
| EAS | Single pulse avalanche energy (Note 5) | 256 | mJ | |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 To 175 | ||
| RJC | Thermal Resistance, Junction-to-Case (Note 2) | 1.8 | /W | |
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 100 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=100V,VGS=0V | - | 1 A |
| IGSS | Gate-Body Leakage Current | VGS=20V,VDS=0V | - | 100 nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=250A | 1 - 3 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=20A | - 24 28 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=10A | - 28 30 | m |
| gFS | Forward Transconductance | VDS=5V,ID=10A | - 15 - | S |
| Ciss | Input Capacitance | VDS=25V,VGS=0V, F=1.0MHz | - 2000 - | PF |
| Coss | Output Capacitance | - 300 - | PF | |
| Crss | Reverse Transfer Capacitance | - 250 - | PF | |
| td(on) | Turn-on Delay Time | VDD=50V,RL=5 VGS=10V,RGEN=3 | - 7 - | nS |
| tr | Turn-on Rise Time | - 7 - | nS | |
| td(off) | Turn-Off Delay Time | - 29 - | nS | |
| tf | Turn-Off Fall Time | - 7 - | nS | |
| Qg | Total Gate Charge | VDS=50V,ID=10A, VGS=10V | - 39 - | nC |
| Qgs | Gate-Source Charge | - 8 - | nC | |
| Qgd | Gate-Drain Charge | - 12 - | nC | |
| VSD | Diode Forward Voltage (Note 3) | VGS=0V,IS=20A | - - 1.2 | V |
| IS | Diode Forward Current (Note 2) | - - 30 | A | |
| trr | Reverse Recovery Time | TJ = 25C, IF = 10A di/dt = 100A/s(Note3) | - 32 - | nS |
| Qrr | Reverse Recovery Charge | - 53 - | nC | |
| ton | Forward Turn-On Time | Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) | ||
| Ordering Information | ||||
| Product ID | Pack Marking | Qty(PCS) | ||
| STD47N10F7AG | STD47N10F7AG | 2500 | ||
| Package Mechanical Data | ||||
| Package Type | Dimensions (mm) | Dimensions (inches) | ||
| TO-252-3L | Min. Typ. Max. | Min. Typ. Max. | ||
| A | 2.10 - 2.50 | 0.083 - 0.098 | ||
| A2 | 0 - 0.10 | 0 - 0.004 | ||
| B | 0.66 - 0.86 | 0.026 - 0.034 | ||
| C | 0.40 - 0.60 | 0.016 - 0.024 | ||
| D | 6.40 - 6.80 | 0.252 - 0.268 | ||
| E | 9.50 - 10.70 | 0.374 - 0.421 | ||
| G | 0.083 - 0.098 | 0.003 - 0.004 | ||
| H | 0.026 - 0.034 | 0.001 - 0.001 | ||
| L | 5.90 - 6.30 | 0.232 - 0.248 | ||
| V1 | 4.47 - 4.67 | 0.176 - 0.184 | ||
| V2 | 1.09 - 1.21 | 0.043 - 0.048 | ||
| L2 | 0 - 6 | 0 - 6 | ||
| B2 | 5.18 - 5.48 | 0.204 - 0.216 | ||
| C2 | 0.44 - 0.58 | 0.017 - 0.023 | ||
| D1 | 5.30 REF | 0.209 REF | ||
| E1 | 4.63 | 0.182 | ||
Contact Information:
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
Website: www.leiditech.com
2208091800_Leiditech-STD47N10F7AG_C5128401.pdf
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