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quality AEC Q101 Qualified PNP Medium Power Transistor S LBT P180Z4TZHG with Halogen Free Material Compliance factory
quality AEC Q101 Qualified PNP Medium Power Transistor S LBT P180Z4TZHG with Halogen Free Material Compliance factory

AEC Q101 Qualified PNP Medium Power Transistor S LBT P180Z4TZHG with Halogen Free Material Compliance

Key Attributes
Model Number: S-LBTP180Z4TZHG
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
833mW
Transition Frequency(fT):
115MHz
Type:
PNP
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LBTP180Z4TZHG
Package:
SOT-223
Product Description

Product Overview

The LBTP180Z4TZHG and S-LBTP180Z4TZHG are PNP medium power transistors designed for various applications. They feature high current and low voltage capabilities. The S-prefix variants are AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with stringent control change requirements. These devices comply with RoHS requirements and are Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Origin: China (implied by manufacturer)
  • Material Compliance: RoHS, Halogen Free
  • Certifications: AEC-Q101 qualified (S-prefix only)
  • Package: SOT223

Technical Specifications

ParameterSymbolLBTP180Z4TZHGS-LBTP180Z4TZHGUnitMinTyp.Max.
MAXIMUM RATINGS
CollectorBase VoltageVCBO-100-100V
CollectorEmitter VoltageVCEO-80-80V
EmitterBase VoltageVEBO-5-5V
Collector Current ContinuousIC-1-1A
Peak Collector CurrentICM-1.5-1.5A
Peak Base CurrentIBM-0.2-0.2A
Junction and Storage temperatureTJ,Tstg-55+150-55+150C
THERMAL CHARACTERISTICS
Total Device Dissipation, FR4 Board (Note 1) @ TA = 25CPDmW833
Thermal Resistance, JunctiontoAmbient (Note 1)RJAC/W150
ELECTRICAL CHARACTERISTICS
Collector Cutoff CurrentICBOnA-10-100
(IE = 0, VCB = 30 V)
(IE = 0, VCB = 30 V, Tj = 125 C)A-10
Emitter CutOff CurrentIEBOnA-100
(IC = 0, VEB = 5 V)
DC Current GainHFE40250
(IC = -5mA, VCE = -2V)115
(IC = -150mA, VCE = -2V)
(IC = -500mA, VCE = -2V)
CollectorEmitter Saturation VoltageVCE(sat)V-0.5
(IC = 500 mA, IB = 50 mA)
BaseEmitter VoltageVBEV
(IC = 500 mA, VCE = 2 V)
Transitional FrequencyfTMHz100
(IC = 10 mA, VCE = 5 V, f = 100 MHz)
CollectorEmitter Breakdown VoltageVBR(CEO)-80-80V
CollectorBase Breakdown VoltageVBR(CBO)-100-100V
EmitterBase Breakdown VoltageVBR(EBO)-5-5V
(IE = 100 A, IC = 0)
Collector-Emitter cutoff CurrentICEOA-10
(VCE= -80V,IB=0)
BaseEmitter Saturation VoltageVBE(sat)V-1
(IC = 500 mA, IB = 50 mA)
Output CapacitanceCobopF85
(VCB=5V,IE=0,f=1.0MHz)
Input CapacitanceCibopF13.5
(VEB=0.5V,IC=0,f=1.0MHz)

2410010201_LRC-S-LBTP180Z4TZHG_C5383042.pdf

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