P Channel Enhancement Mode Power MOSFET IXTH90P10P PolarPTM Device for High Side Switch Applications
Key Attributes
Model Number:
IXTH90P10P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
90A
RDS(on):
25mΩ@10V,0.5·ID25
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
510pF@25V
Pd - Power Dissipation:
462W
Input Capacitance(Ciss):
5.8nF@25V
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
IXTH90P10P
Package:
TO-247
Product Description
IXTT90P10P / IXTH90P10P PolarPTM Power MOSFETs
The IXTT90P10P and IXTH90P10P are P-Channel Enhancement Mode PolarPTM Power MOSFETs designed for high-performance applications. These devices feature an international standard package, avalanche rating, fast intrinsic diode, and rugged PolarPTM process, offering advantages such as easy mounting, space savings, and high power density. They are suitable for use in high-side switches, push-pull amplifiers, DC choppers, automatic test equipment, and current regulators.
Product Attributes
- Brand: IXYS
- Product Line: PolarPTM Power MOSFETs
- Mode: P-Channel Enhancement Mode
- Certifications: Covered by one or more U.S. patents (listed in source document)
Technical Specifications
| Symbol | Test Conditions | Min. | Typ. | Max. | Units | Part Number |
|---|---|---|---|---|---|---|
| BVDSS | VGS = 0V, ID = - 250A | -100 | V | IXTT90P10P, IXTH90P10P | ||
| VGS(th) | VDS = VGS, ID = - 250A | -2.0 | -4.0 | V | IXTT90P10P, IXTH90P10P | |
| IGSS | VGS = 20V, VDS = 0V | 100 | nA | IXTT90P10P, IXTH90P10P | ||
| IDSS | VDS = VDSS, VGS = 0V | -25 | A | IXTT90P10P, IXTH90P10P | ||
| IDSS | TJ = 125C | -200 | A | IXTT90P10P, IXTH90P10P | ||
| RDS(on) | VGS = -10V, ID = 0.5 ID25, Note 1 | 25 | m | IXTT90P10P, IXTH90P10P | ||
| gfs | VDS = -10V, ID = 0.5 ID25, Note 1 | 22 | 37 | S | IXTT90P10P, IXTH90P10P | |
| Ciss | VGS = 0V, VDS = - 25V, f = 1MHz | 5800 | pF | IXTT90P10P, IXTH90P10P | ||
| Coss | VGS = 0V, VDS = - 25V, f = 1MHz | 1990 | pF | IXTT90P10P, IXTH90P10P | ||
| Crss | VGS = 0V, VDS = - 25V, f = 1MHz | 510 | pF | IXTT90P10P, IXTH90P10P | ||
| td(on) | Resistive Switching Times | 25 | ns | IXTT90P10P, IXTH90P10P | ||
| tr | Resistive Switching Times | 77 | ns | IXTT90P10P, IXTH90P10P | ||
| td(off) | Resistive Switching Times | 54 | ns | IXTT90P10P, IXTH90P10P | ||
| tf | Resistive Switching Times | 32 | ns | IXTT90P10P, IXTH90P10P | ||
| Qg(on) | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 120 | nC | IXTT90P10P, IXTH90P10P | ||
| Qgs | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 23 | nC | IXTT90P10P, IXTH90P10P | ||
| Qgd | VGS = -10V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 60 | nC | IXTT90P10P, IXTH90P10P | ||
| RthJC | 0.27 | C/W | IXTT90P10P, IXTH90P10P | |||
| RthCS | TO-247 | 0.21 | C/W | IXTH90P10P | ||
| IS | VGS = 0V | -90 | A | IXTT90P10P, IXTH90P10P | ||
| ISM | Repetitive, Pulse Width Limited by TJM | -360 | A | IXTT90P10P, IXTH90P10P | ||
| VSD | IF = - 45A, VGS = 0V, Note 1 | -3.3 | V | IXTT90P10P, IXTH90P10P | ||
| trr | IF = - 45A, -di/dt = -100A/s | 144 | ns | IXTT90P10P, IXTH90P10P | ||
| QRM | IF = - 45A, -di/dt = -100A/s | 0.92 | C | IXTT90P10P, IXTH90P10P | ||
| IRM | IF = - 45A, -di/dt = -100A/s | -12.8 | A | IXTT90P10P, IXTH90P10P | ||
| VDSS | TJ = 25C to 150C | -100 | V | IXTT90P10P, IXTH90P10P | ||
| ID25 | TC = 25C | -90 | A | IXTT90P10P, IXTH90P10P | ||
| IDM | TC = 25C, Pulse Width Limited by TJM | -225 | A | IXTT90P10P, IXTH90P10P | ||
| PD | TC = 25C | 462 | W | IXTT90P10P, IXTH90P10P | ||
| TJ | -55 | +150 | C | IXTT90P10P, IXTH90P10P | ||
| TJM | 150 | C | IXTT90P10P, IXTH90P10P | |||
| Tstg | -55 | +150 | C | IXTT90P10P, IXTH90P10P | ||
| TL | 1.6mm from Case for 10s | 300 | C | IXTT90P10P, IXTH90P10P | ||
| TSOLD | Plastic Body for 10s | 260 | C | IXTT90P10P, IXTH90P10P | ||
| Md | Mounting Torque (TO-247) | 1.13 | Nm/lb.in. | IXTH90P10P | ||
| Weight | TO-268 | 6 | g | IXTT90P10P | ||
| Weight | TO-247 | 4 | g | IXTH90P10P |
2410121308_Littelfuse-IXTH90P10P_C6280796.pdf
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