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quality Power P Channel MOSFET LRC LP2371LT1G 100 Volt Device with Fast Switching and Halogen Free Material factory
quality Power P Channel MOSFET LRC LP2371LT1G 100 Volt Device with Fast Switching and Halogen Free Material factory

Power P Channel MOSFET LRC LP2371LT1G 100 Volt Device with Fast Switching and Halogen Free Material

Key Attributes
Model Number: LP2371LT1G
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
800mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
14.4pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
472pF@15V
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
LP2371LT1G
Package:
SOT-23E
Product Description

Product Overview

This P-Channel 100-V (D-S) MOSFET, available under the LP2371LT1G and S-LP2371LT1G models, is designed for efficient power management in various electronic applications. It features low RDS(on) with trench technology, fast switching speeds, and compliance with RoHS and Halogen Free requirements. The S- prefix denotes automotive qualification (AEC-Q101 qualified and PPAP capable) for applications requiring unique site and control change requirements. Key applications include PoE Power Sourcing Equipment, PoE Powered Devices, Telecom DC/DC converters, and White LED boost converters.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Automotive Qualification (S- prefix): AEC-Q101 qualified, PPAP capable
  • Technology: Low RDS(on) trench technology

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit
DrainSource Voltage VDSS 100 V
GatetoSource Voltage VGS 20 V
DrainSource Breakdown Voltage VBRDSS 47 V
Gate Threshold Voltage VGS(th) -1 -1.1 -1.3 V
Gate Leakage Current IGSS 100 nA
Zero Gate Voltage Drain Current IDSS -25 -100 A
Static DrainSource OnState Resistance RDS(on) 1.4 (VGS = -10 V, ID = -1 A) 1.5 (VGS = -4.5 V, ID = -0.9 A)
Diode Forward Voltage VSD -0.81 V
Total Gate Charge Qg 4 nC
Gate-Source Charge Qgs 1.6 nC
Gate-Drain Charge Qgd 1.2 nC
Input Capacitance Ciss 18.6 pF
Output Capacitance Coss 14.4 pF
Reverse Transfer Capacitance Crss 1.9 pF
Turn-On Delay Time td(on) 3.6 ns
Rise Time tr 19.9 ns
Turn-Off Delay Time td(off) 1.1 ns
Fall Time tf 1.3 ns
Junction Temperature Tj -55 150
Storage Temperature Range Tstg -55 150
Continuous Drain Current (Ta=25) ID -1 -1.3 A
Continuous Drain Current (Ta=70) ID -0.8 A
Power Dissipation (Ta=25) PD 1.3 W
Power Dissipation (Ta=70) PD 0.8 W
Thermal Resistance-Junction to Ambient RJA 166 (Note 1) 208.7 (Note 1, PCB Size: 30.0mm25.0mm1.6mm) /W
Model Marking Shipping
LP2371LT1G LP2371LT1G 3000/Tape&Reel
S-LP2371LT1G S-LP2371LT1G 3000/Tape&Reel
LP2371LT3G LP2371LT3G 10000/Tape&Reel

Notes:

  • 1. Surface mounted on "1.5 x 1.5" FR4 board using 1 sq in pad, 2 oz Cu.
  • 2. Pulse width limited by maximum junction temperature.
  • 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

2212131830_LRC-LP2371LT1G_C5273712.pdf

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